MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSF40N10A


MOSFET N Trench 100V 31A (Tc) 2.5V @ 250uA 55 mΩ @ 12A,10V TO-252 RoHS
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Winsok 3740
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AUD 0.3476
Multiples of: 1

                   
NTD6415ANLT4G


ON Semiconductor MOSFET 100V HD3E NCH
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ON Semiconductor 3737
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AUD 1.4178
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23 A100 V44 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSmd/SmtDPAK - 3ReelSi1 Channel20 V35 nC   
SK2307A


MOSFET P Trench 16V 4A 1.5V @ 250uA 90 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Shikues 3736
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AUD 0.0499
Multiples of: 10

                   
BSZ086P03NS3G


MOSFET P Channel 30V 13.5A 3.1V @ 105uA 8.6mO @ 20A,10V TSDSON-8 RoHS
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Infineon 3736
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AUD 0.5001
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IRFR120TRRPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 3736
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AUD 0.9729
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
SUD15N15-95-BE3


MOSFET 150V N-CH (D-S) 175 DEG.C
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Vishay 3735
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AUD 2.75
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15 A150 V95 mOhmsN - Channel 2 V- 55 C+ 175 C62 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancement  
2N7002K


60V 300mA 1.9Ω 2.5V N Channel SOT23 MOSFETs ROHS
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HL 3734
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AUD 0.0079
Multiples of: 50

                   
2N7002


null 300mA 225mW 1.4@4.5V,200mA 1.5V@250uA SOT-23 MOSFETs ROHS
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Siliup 3734
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AUD 0.0118
Multiples of: 50

                   
IRLML6401


SOT-23 MOSFETs ROHS
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Bourne 3734
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AUD 0.0493
Multiples of: 10

                   
SIZ340DT-T1-GE3


Mosfet Array 2 N-Channel (Half Bridge) 30V 30A, 40A 16.7W, 31W Surface Mount 8-Power33 (3x3)
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Vishay 3397
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AUD 0.5074
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30 A30 V9.5 mOhmsN - Channel20 V2.4 V- 55 C+ 150 C16.7 WSmd/SmtPowerpair - 8ReelSi  12.3 nCEnhancement Trenchfet
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