MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS9958


Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
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ON Semiconductor 3750
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AUD 0.6617
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ISC045N03L5SATMA1


MOSFET TRENCH <= 40V
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Infineon 3749
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AUD 0.2968
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WSP4068


40V 10A 13.5mΩ@10V,12A 2.08W N Channel SO-8 MOSFETs ROHS
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Winsok 3746
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AUD 0.2787
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SSM3J328R-HXY


18V 6.5A 28mΩ@4.5V,4.1A 2W 1V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 3744
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AUD 0.0744
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HSCB20D03


20V 3A 900mΩ@4.5V,3A 1.5W 750mV@250uA 37pF@10V 2 P-Channel 331pF@10V 3.3nC@4.5V -55℃~+150℃@(Tj) DFN(2x2) MOSFETs ROHS
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HUASHUO 3744
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AUD 0.1121
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IRFHM830TRPBF


MOSFET N Trench 30V 21A 2.35V @ 50uA 3.8 mΩ @ 20A,10V PQFN 3.3x3.3 RoHS
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Infineon 3744
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AUD 0.5757
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21 A30 V4.8 mOhmsN - Channel 1.8 V- 55 C+ 150 C2.7 WSmd/SmtPQFN - 8ReelSi1 Channel20 V31 nCEnhancement  
TK8P60W5,RVQ


N-Channel 600 V 8A (Ta) 80W (Tc) Surface Mount DPAK
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Toshiba 3744
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AUD 1.094
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8 A600 V440 mOhmsN - Channel 3 V- 55 C+ 150 C80 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V22 nCEnhancement Dtmosiv
IPB35N10S3L26ATMA1


MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
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Infineon 3741
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AUD 1.5138
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35 A100 V20.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V39 nCEnhancementAec - Q101 
IRFS7430TRL7PP


Trans MOSFET N-CH 40V 522A 7-Pin D2PAK T/R
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Infineon 3686
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AUD 1.5699
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522 A40 V0.75 mOhmsN - Channel20 V3 V  375 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V305 nC  Strongirfet
IRFB3307ZPBF


MOSFET N Trench 75V 120A 4V @ 150uA 5.8 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 183
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AUD 1.7964
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120 A75 V4.6 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V79 nC   
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