MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HP8M31TB1


MOSFET 60V NCH+PCH POWER
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 3931
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AUD 1.8552
Multiples of: 1

4.5 A30 V35 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel20 V14 nCEnhancement  
GT060N04D5


40V 62A 4.5m 39W 1.4V 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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GOFORD 3928
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AUD 0.2821
Multiples of: 5

                   
AO4484


Transistor: N-MOSFET; unipolar; 40V; 8A; 1.1W; SO8
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Alpha & Omega 3926
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AUD 0.3322
Multiples of: 1

                   
DMN12M7UCA10-7


MOSFET MOSFET BVDSS: 8V 24V X4-DSN3015-10 T&R 5K
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Diodes Incorporated 3923
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AUD 0.5861
Multiples of: 1

20.2 A12 V2.75 mOhmsN - Channel 0.5 V- 55 C+ 150 C1.73 WSmd/SmtX4 - DSN3015 - 10Cut TapeSi2 Channel8 V35.7 nCEnhancement  
IQDH88N06LM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 3922
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AUD 3.8746
Multiples of: 1

447 A60 V860 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V76 nCEnhancement OptiMOS
YJD50N03A


MOSFET TO-252 RoHS
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Yangjie 3894
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AUD 0.2124
Multiples of: 5

                   
2N7002


null 380mA 2.4@4.5V,200mA 200mW 1.3V@250uA SOT-23 MOSFETs ROHS
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MOT 3880
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AUD 0.0115
Multiples of: 50

                   
AON6144


MOSFET N Trench 40V 100A (Tc) 2.4V @ 250uA 2.4 mΩ @ 20A,10V DFN 5x6 RoHS
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Alpha & Omega 3486
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AUD 0.5658
Multiples of: 1

                   
PJA3441-AU_R1_000A1


MOSFET 40V P-Channel Enhancement Mode MOSFET
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Panjit 2798
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AUD 0.1197
Multiples of: 5

                   
SIA931DJ-T1-GE3


MOSFET -30V 65mOhm@-10V -4.5A P-CH
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.2765
Multiples of: 3000

4.5 A- 30 V77 mOhmsP - Channel20 V- 2.2 V- 55 C+ 150 C7.8 WSmd/SmtSC - 70 - 6ReelSi  8.5 nCEnhancement Trenchfetr
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