MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD90N10S4L06ATMA1


MOSFET MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 19400
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AUD 2.102
Multiples of: 2500

90 A100 V5.8 mOhmsN - Channel 1.1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel16 V98 nCEnhancementAec - Q101 
NCV8415DTRKG


MOSFETs Self-Protected Low Side Driver with In-Rush Current Management Low Side SmartFET
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ON Semiconductor 4422
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AUD 0.8529
Multiples of: 1

11 A42 V120 mOhmsN - Channel 2 V- 40 C+ 150 C2.99 WSMD/SMTTO - 252 - 4Reel , Cut TapeSi1 Channel- 14 V , + 14 V Enhancement  
FDMS0312AS


Fairchild Semiconductor MOSFET
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ON Semiconductor 4421
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AUD 0.3931
Multiples of: 1

18 A30 V4.2 mOhmsN - Channel+/- 20 V1.5 V- 55 C+ 150 C2.5 WSmd/SmtPOWER56 - 8ReelSi 20 V23 nCEnhancement Powertrench Syncfet
Hot SCH1430-TL-W


MOSFET NCH 1.8V Power MOSFE
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ON Semiconductor 4418
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AUD 0.1005
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2 A20 V310 mOhmsN - Channel 400 mV- 55 C+ 150 C800 mWSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 12 V1.8 nCEnhancement  
JSM2622


PDFN3333-8 MOSFETs ROHS
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JSMSEMI 4418
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AUD 0.1539
Multiples of: 5

                   
IQD009N06NM5ATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4417
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AUD 3.5385
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445 A60 V900 uOhmsN - Channel 3.3 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V120 nCEnhancement  
IQDH88N06LM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4417
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AUD 4.0683
Multiples of: 1

447 A60 V860 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V76 nCEnhancement OptiMOS
IPD90N04S4L-04


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 4416
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AUD 0.6652
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90 A40 V3.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 v , 16 V60 nCEnhancementAec - Q101Optimos
SI2307


30V 3A 68m 1.5V 1PCSPChannel SOT-23 MOSFETs ROHS
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PAKER Microelectronics 4414
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AUD 0.045
Multiples of: 10

                   
IRF3808PBF


Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
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Infineon 1750
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AUD 1.5109
Multiples of: 1

140 A75 V7 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nC   
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