MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG1012T-7


MOSFET MOSFET N-CHANNEL SOT-523
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Diodes Incorporated 69568
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AUD 0.0317
Multiples of: 20

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
BSC014N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
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Infineon 4484
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AUD 2.1302
Multiples of: 1

            Optimos      
VN2106N3-G


MOSFET N Trench 60V 300mA (Tj) 2.4V @ 1mA 6 Ω @ 75mA,5V TO-92 (TO-92-3) RoHS
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Microchip 4479
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AUD 0.4825
Multiples of: 50

300 mA60 V4 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
ESN21307


30V 24A 8m@20A,10V 38W 1.5V@250uA 1PCSPChannel PDFN-8L(5x6) MOSFETs ROHS
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ElecSuper 4476
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AUD 0.2376
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SIRA00DP-T1-GE3


Vishay Semiconductors MOSFET 30V 1mOhm10V 60A N-Ch G-IV
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Vishay 4475
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AUD 0.7487
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           -       
IRF7316TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 4471
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AUD 0.1759
Multiples of: 5

                   
IRF840LCPBF


N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 4470
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AUD 1.2901
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3TubeSi      
IRF7103TRPBFXTMA1


MOSFETs PLANAR 40<-<100V
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Infineon 4470
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AUD 0.4103
Multiples of: 1

3 A50 V130 mOhmsN - Channel 3 V- 55 C+ 150 C2 WSMD/SMTSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V12 nCEnhancement  
IPD50N10S3L-16


Infineon Technologies MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
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Infineon 4326
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AUD 1.4475
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50 A100 V15 mOhmsN - Channel20 V1.2 V- 55 C+ 175 C100 WSmd/SmtDPAK - 3ReelSi1 Channel10 V49 nCEnhancementAec - Q101Optimos
RSJ250P10TL


ROHM Semiconductor MOSFET PWR MOSFET LOW RESIST DEVICE
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ROHM 4172
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AUD 2.2349
Multiples of: 1

25 A100 V45 mOhmsP - Channel 2.5 V- 55 C+ 150 C50 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V60 nCEnhancement  
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