MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT3020LFDB-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 3981
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AUD 0.5835
Multiples of: 1

7.7 A , 7.7 A30 V , 30 V20 mOhms , 20 mOhmsN - Channel 1 V , 1 V- 55 C+ 150 C1.8 WSmd/SmtU - DFN2020 - B - 6Cut TapeSi2 Channel20 V , 20 V7 nC , 7 nCEnhancement  
BSC042N03LS G


Infineon Technologies MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3
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Infineon 3977
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AUD 0.5713
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93 A30 V4.2 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
DMN1017UCP3-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 3970
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AUD 0.2906
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7.5 A12 V14.1 mOhmsN - Channel 400 mV- 55 C+ 150 C1.47 WSmd/SmtX3 - DSN1010 - 3Cut TapeSi1 Channel8 V16 nCEnhancement  
PSMNR60-25YLHX


MOSFET 25V N-CHANNEL LOGIC LEVEL
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Nexperia 3969
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AUD 1.3003
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300 A25 V700 uOhmsN - Channel 2.2 V- 55 C+ 175 C268 WSMD/SMTLFPAK - 56 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V43 nCEnhancement  
IAUA250N04S6N007AUMA1


MOSFET MOSFET_(20V 40V)
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Infineon 3968
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AUD 2.9024
Multiples of: 1

250 A40 V700 uOhmsN - Channel 2.6 V- 55 C+ 175 C250 WSMD/SMTHSOF - 5Cut Tape , ReelSi1 Channel- 20 V , + 20 V127 nCEnhancement OptiMOS
AO4807


SOP-8 MOSFETs ROHS
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Youtai 3967
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AUD 0.1354
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KNY3404D


DFN5x6 MOSFETs ROHS
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KIA 3850
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AUD 0.1263
Multiples of: 5

                   
BS170D27Z


Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.83W; TO92
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ON Semiconductor 3648
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AUD 0.326
Multiples of: 1

                   
STD100N10F7


STMicroelectronics MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120W
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STMicroelectronics 3566
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AUD 0.9871
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80 A100 V8 mOhmsN - Channel  - 55 C+ 175 C120 WSmd/SmtDPAK - 3ReelSi1 Channel 56 nC  Stripfet
SI4532CDY-T1-GE3


MOSFET 30V 6.0/4.3A 2.78W 47/89mohm @ 10V
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Vishay 2740
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AUD 0.4062
Multiples of: 1

4.3 A , 6 A30 V47 mOhms , 89 mOhmsN And P - Channel 1 V- 55 C+ 150 C2.78 w , 2.78 WSmd/SmtSOIC - 8 NarrowReelSi2 Channel10 V6 nC , 7.8 nCEnhancement Trenchfet
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