MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL540NPBF


MOSFET N Trench 100V 36A 2V @ 250uA 44 mΩ @ 18A,10V TO-220 (TO-220-3) RoHS
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Infineon 6285
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AUD 0.7487
Multiples of: 1

36 A100 V44 mOhmsN - Channel 2 V- 55 C+ 175 C140 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V49.3 nC   
STF7N95K3


STMicroelectronics MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220
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STMicroelectronics 3880
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AUD 2.6552
Multiples of: 1

7.2 A950 V1.35 Ohmsn - channel  - 55 C+ 150 C35 Wthrough holeTO - 220 - 3Tubesi1 channel30 V34 nCenhancement supermesh
TSM600NA25CIT C0G


MOSFETs 250V, 22A, Single, N-Channel Low Voltage MOSFETs
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Taiwan Semiconductor 3880
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AUD 3.6738
Multiples of: 1

22 A250 V60 mOhmsN - Channel 4.2 V- 55 C+ 150 C78 WThrough HoleITO - 220TL - 3TubeSi1 Channel- 30 V , + 30 V71 nCEnhancement  
TK110U65Z,RQ


MOSFET PWR MOS PD=190W F=1MHZ
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Toshiba 3880
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AUD 3.7238
Multiples of: 1

24 A650 V86 mOhmsN - Channel 4 V- 55 C+ 150 C190 WSMD/SMT2 - 10AF1A - 9Cut Tape , ReelSi1 Channel- 30 V , + 30 V40 nCEnhancement  
STH180N10F3-2


MOSFET N-Ch 100V 3.9 mOhm 180A STripFET
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STMicroelectronics 3880
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AUD 3.6381
Multiples of: 1000

120 A100 V4.5 mOhmsn - channel 4 V  315 Wthrough holeTO - 220Reelsi1 channel20 V114.6 nC  stripfet
IPB80N06S2H5ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 3880
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AUD 4.0577
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   N - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
SiHP30N60E-E3


MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
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Vishay 3880
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AUD 4.5646
Multiples of: 1

29 A600 V125 mOhmsN - Channel 2.8 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V85 nCEnhancement  
FDBL0110N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 3880
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AUD 5.3843
Multiples of: 2000

300 A60 V2.2 mOhmsn - channel 2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V170 nCenhancement powertrench
SIHP12N60E-BE3


N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB
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Vishay 3878
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AUD 2.6731
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12 A600 V380 mOhmsN - Channel 4 V- 55 C+ 150 C147 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V29 nCEnhancement  
STB11NM80T4


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 970
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AUD 6.5205
Multiples of: 1000

11 A800 V400 mOhmsN - Channel30 V - 65 C+ 150 C150 WSmd/SmtD2PAK - 3Reel    Enhancement  
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