MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC500N20NS3 G


Trans MOSFET N-CH 200V 24A
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Infineon 4494
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AUD 1.3392
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   N - Channel       Reel 1 Channel     
IQD063N15NM5CGSCATMA1


MOSFETs TRENCH >=100V
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Infineon 4494
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AUD 4.2254
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151 A150 V6.32 mOhmsN - Channel 4.6 V- 55 C+ 175 C333 WSMD/SMTPG - WHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement OptiMOS
AP1605


20V 700mA P Channel DFN-3(1x0.6) MOSFETs ROHS
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Quan Li 4490
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AUD 0.039
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IQDH29NE2LM5ATMA1


MOSFETs N
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Infineon 4490
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AUD 3.0092
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789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement  
FDS3590


MOSFET SO-8 N-CH 80V
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ON Semiconductor 4489
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AUD 0.6652
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6.5 A80 V32 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement Powertrench
DMN2053U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 4487
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AUD 0.1135
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6.5 A20 V29 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V4.6 nCEnhancement  
TPH4R008NH,L1Q(M


80V 60A 78W 4m@10V,30A 4V@1mA 1 N-Channel SOP-8-5.0mm MOSFETs ROHS
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Toshiba 4487
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AUD 0.9962
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SI1467DH-T1-BE3


P-Channel 20V 3A (Ta), 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
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Vishay 4486
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AUD 0.3906
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2.7 A20 V150 mOhmsP - Channel 1 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , + 8 V13.5 nCEnhancement  
DN1509N8-G


Transistor: N-MOSFET; unipolar; 90V; 0.3A; 1.6W; SOT89-3
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Microchip 4483
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AUD 1.1803
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BSC032N04LS


Infineon Technologies MOSFET
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Infineon 2318
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AUD 0.5832
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98 A40 V3.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C52 WSmd/SmtTDSON - 8ReelSi1 Channel10 V25 nCEnhancement Optimos
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