MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFHS8242TRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
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Infineon 3880
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AUD 0.3013
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9.9 A25 V17 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V4.3 nC   
LN06N060TZHG


60V 4.5A 60m 1PCSNChannel SOT-223 MOSFETs ROHS
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Leshan 3880
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AUD 0.3149
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STQ1NK60ZR-AP


STMicroelectronics MOSFET
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STMicroelectronics 3880
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AUD 0.3252
Multiples of: 2000

300 mA600 V15 OhmsN - Channel30 V3 V- 55 C+ 150 C3 WThrough HoleTO - 92 - 3ReelSi1 Channel10 V4.9 nCEnhancement Supermesh
BSP125H6433XTMA1


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 3880
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AUD 0.3336
Multiples of: 4000

120 mA600 V45 OhmsN - Channel 1.3 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V4.4 nCEnhancement  
HSM4P10D


100V 4A 105m@10V,4A 2W 1.8V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
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HUASHUO 3880
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AUD 0.3756
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STQ1HNK60R-AP


N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
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STMicroelectronics 3880
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AUD 0.3871
Multiples of: 2000

400 mA600 V8.5 OhmsN - Channel30 V - 55 C+ 150 C30 WThrough HoleTO - 92 - 3 Si1 Channel30 V Enhancement  
FDT3612


MOSFET 100V NCh PowerTrench
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ON Semiconductor 3880
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AUD 0.4106
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3.7 A100 V88 mOhmsN - Channel  - 55 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement Powertrench
FQT5P10TF


Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
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ON Semiconductor 3880
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AUD 0.4157
Multiples of: 4000

   P Channel               
BSC079N03LSCGATMA1


MOSFET TRENCH <= 40V
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Infineon 3880
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AUD 0.3683
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FDT439N


Transistor: N-MOSFET; unipolar; 30V; 6.3A; 3W; SOT223
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ON Semiconductor 3880
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AUD 0.5299
Multiples of: 1000

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