MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK3018


SOT-23 MOSFETs ROHS
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Bourne 4559
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AUD 0.0208
Multiples of: 20

                   
BRCS3401MA


30V 4.2A P Channel SOT-23 MOSFETs ROHS
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Blue Rocket 4559
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AUD 0.0347
Multiples of: 20

                   
BR4953D-A


MOSFET 2 P Channel (Dual) 20V 3A 1V @ 250uA 97 mΩ @ 2.7A,10V SOP-8 RoHS
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Blue Rocket 4559
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AUD 0.0555
Multiples of: 10

                   
NTD3055-150T4G


ON Semiconductor MOSFET 60V 9A N-Channel
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ON Semiconductor 4559
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AUD 0.6442
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9 A60 V122 mOhmsN - Channel20 V - 55 C+ 175 C28.8 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
IXTH30N60L2


MOSFET 30 Amps 600V
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IXYS 4559
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AUD 20.7952
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30 A600 V240 mOhmsn - channel 2.5 V- 55 C+ 150 C540 Wthrough holeTO - 247 - 3Tubesi1 channel10 V335 nCenhancement linear l2
TPIRFTS9342TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 4556
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AUD 0.1159
Multiples of: 5

                   
IPD19DP10NMATMA1


MOSFET TRENCH >=100V
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Infineon 4556
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AUD 0.7944
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13.7 A100 V186 mOhmsP - Channel 4 V- 55 C+ 175 C83 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancement  
IRFBE30SPBF


N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 4555
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AUD 1.9067
Multiples of: 1

         Smd/SmtTO - 263 - 3TubeSi      
FDN306P


Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
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ON Semiconductor 4384
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AUD 0.1916
Multiples of: 5

   P               
BSC070N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8
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Infineon 3296
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AUD 0.9795
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80 A100 V10.2 mOhmsN - Channel 2.2 V- 55 C+ 150 C83 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V30 nCEnhancement Optimos
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