MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3E150BNTB


N-Channel 30 V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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ROHM 4581
Ships to you
between Mon. 01 Dec to Wed. 03 Dec
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AUD 0.3108

Multiples of: 1

22 A30 V3.8 mOhmsN - Channel 1 V- 55 C+ 150 C18 WSmd/SmtH SMT - 8Tape And ReelSi1 Channel20 V45 nCEnhancement  
FQB10N50CFTM_WS


Fairchild Semiconductor MOSFET 500V 10A N-Channel
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ON Semiconductor 4579
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between Mon. 01 Dec to Wed. 03 Dec
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AUD 2.8654

Multiples of: 1

10 A500 V610 mOhmsN - Channel30 V - 55 C+ 150 C143 WSmd/SmtDPAK - 3ReelSi1 Channel30 V45 nCEnhancement  
AGM40P65AP


40V 12A 65m@10V,6A 18W 1.65V@250uA 1PCSPChannel DFN3x3 MOSFETs ROHS
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AGM-Semi 4578
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between Tue. 09 Dec to Fri. 12 Dec
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AUD 0.0979

Multiples of: 5

                   
IPTC017N12NM6ATMA1


MOSFETs N
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Infineon 4578
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between Mon. 01 Dec to Wed. 03 Dec
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AUD 6.0063

Multiples of: 1

331 A120 V1.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C395 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V113 nCEnhancement OptiMOS
BSZ031NE2LS5ATMA1


25V 3.1mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon 4577
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between Mon. 01 Dec to Wed. 03 Dec
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AUD 0.6757

Multiples of: 1

           Cut Tape       
CJAC50N06


PDFNWB-8L(5x6) MOSFETs ROHS
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Changjing Electronics Technology 4576
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between Tue. 09 Dec to Fri. 12 Dec
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AUD 0.4833

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SED4060GM


MOSFET N Trench 40V 60A 2.2V @ 250uA 9.5 mΩ @ 20A,10V DFN 3x3 RoHS
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SINO-IC 4573
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between Tue. 09 Dec to Fri. 12 Dec
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AUD 0.2868

Multiples of: 5

                   
EFC4615R-TR


ON Semiconductor MOSFET NCH 2.5V DRIVE SERIES
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ON Semiconductor 4572
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between Mon. 01 Dec to Wed. 03 Dec
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AUD 0.2497

Multiples of: 1

6 A24 V45 mOhmsN - Channel     Smd/SmtWLCSP - 4ReelSi      
YJD15N10A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
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Yangjie 4554
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between Tue. 09 Dec to Fri. 12 Dec
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AUD 0.1706

Multiples of: 5

            Trench Power Mv      
FDS4672A


40V 11A 13mO@4.5V,11A 2.5W N Channel SOIC-8 MOSFETs ROHS
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ON Semiconductor 4086
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between Mon. 01 Dec to Wed. 03 Dec
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AUD 0.5378

Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtSOIC - 8 NarrowReel       
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