MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3018SFK-7


MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
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Diodes Incorporated 6109
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AUD 0.5861
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10.2 A30 V9.5 mOhmsP - Channel 1 V- 55 C+ 150 C17 WSmd/SmtU - DFN2523 - 6Cut TapeSi1 Channel25 V42.7 nCEnhancement  
SIS402DN-T1-GE3


MOSFET 30V 35A 5.2W 6.0mohm @ 10V
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Vishay 5693
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AUD 0.3294
Multiples of: 5

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet, Powerpak
FDMS0309AS


Fairchild Semiconductor MOSFET
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ON Semiconductor 3904
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AUD 0.486
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   N - Channel     Smd/SmtPOWER - 56 - 8ReelSi2 Channel    Powertrench Syncfet
NCE3400-ES


30V 6A 19m@10V,6.0A 1.4W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 3903
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AUD 0.0251
Multiples of: 20

                   
KY2302H


20V 4A 24mΩ@4.5V,4A 840mW 700mV@250uA N Channel SOT-23 MOSFETs ROHS
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Kang Yang 3902
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AUD 0.0255
Multiples of: 20

                   
NTMFS5H409NLT1G


MOSFET T8 40V LOW COSS
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ON Semiconductor 3898
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AUD 1.8716
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270 A40 V1.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C140 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V89 nCEnhancement  
Hot DN2530N8-G


Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
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Microchip 3887
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AUD 1.0458
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SIHD14N60E-GE3


MOSFET N-Ch 650V Vds 8nC Qgs
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Vishay 3880
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AUD 1.717
Multiples of: 1

13 A600 V0.269 OhmsN - Channel 4 V- 55 C+ 150 C147 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V32 nCEnhancement  
IRFR5410TRPBF


MOSFET P Trench 100V 13A 4V @ 250uA 205 mΩ @ 7.8A,10V TO-252-2 (DPAK) RoHS
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Infineon 3872
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AUD 0.4896
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13 A100 V205 mOhmsP - Channel 4 V- 55 C+ 150 C66 WSmd/SmtDPAK - 3ReelSi1 Channel20 V38.7 nCEnhancement  
NTZS3151PT1G


MOSFET -20V -950mA P-Channel
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ON Semiconductor 3803
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AUD 0.1018
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 563Reel       
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