MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC886N03LSGATMA1


MOSFET TRENCH <= 40V
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Infineon 4470
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AUD 0.4861
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           Reel      Optimos
IQE006NE2LM5CGATMA1


N-Channel 25V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) Through Hole IPAK (TO-251AA)
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Infineon 4470
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AUD 1.4021
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          TO - 251 - 3 SHORT LEADS , IPAK , TO - 251AADigi - Reel®Mosfet (Metal Oxide)      
IXTA64N10L2


MOSFET MSFT N-CH LINEAR L2
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IXYS 4468
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AUD 13.7762
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64 A100 V32 mOhmsn - channel 2.5 V- 55 C+ 150 C357 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V100 nCenhancement  
BSC042N03MS G


Infineon Technologies MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M
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Infineon 4467
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AUD 0.5962
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17 A30 V4.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
L2N7002KX4T5G


null 0.32A null DFN1010 MOSFETs ROHS
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Leshan 4466
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AUD 0.015
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MMFTP2319


MOSFETs MOSFET, SOT-23, -40V, -4.2A, 150C, P
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Diotec 4464
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AUD 0.1537
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4.2 A40 V80 mOhmsP - Channel 3 V- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Reel , Cut Tape 1 Channel- 20 V , + 20 V20 nCEnhancement  
DMN3021LFDF-7


MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K
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Diodes Incorporated 4463
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AUD 0.2165
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         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
CJAC100P03


MOSFET P Channel 30V 100A(Tc) 2.2V @ 250uA 3.3mO @ 30A,10V PDFNWB5x6-8L RoHS
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Changjing Electronics Technology 4461
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AUD 0.756
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SI4848DY-T1-E3


150V 2.7A 1.5W 85mO@10V,3.5A N Channel SOP-8 MOSFETs ROHS
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Vishay 4349
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AUD 0.5972
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   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel      Trenchfet
IRLL2705TRPBF


Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
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Infineon 4240
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AUD 0.3797
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3.8 A55 V65 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel16 V32 nC   
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