MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP6090AGU


PDFN-8(5.2x6.2) MOSFETs ROHS
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NCE Power 10378
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AUD 0.5606
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IPP033N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 3870
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AUD 0.6865
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78 A30 V3.3 mOhmsN - Channel 2.35 V- 55 C+ 175 C83 WThrough Hole TubeSi1 Channel- 20 V , + 20 V3 nCEnhancement StrongIRFET
ZVN0124A


MOSFET N-Chnl 240V
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Diodes Incorporated 3870
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AUD 0.7338
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160 mA240 V16 OhmsN - Channel  - 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
NTMFS4985NFT3G


MOSFET NFET SO8FL 30V 65A 5MOHM
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ON Semiconductor 3868
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AUD 0.5484
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65 A30 V3.4 mOhmsN - Channel     Smd/SmtSO - FL - 8Cut TapeSi1 Channel     
SIHP17N80E-BE3


MOSFET 800V N-CH MOSFET
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Vishay 3868
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AUD 4.3048
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15 A800 V250 mOhmsN - Channel 4 V- 55 C+ 150 C208 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V122 nCEnhancement  
IRFL014TRPBF


N-Channel 60 V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 3867
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AUD 0.4646
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
IAUMN08S5N013GAUMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 3865
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AUD 3.5208
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350 A80 V1.3 mOhmsN - Channel 3.8 V- 55 C+ 175 C307 WSMD/SMTPG - HSOG - 4 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V138 nCEnhancement  
ZVN2110ASTZ


Diodes Incorporated MOSFET N-Chnl 100V
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Diodes Incorporated 3863
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AUD 0.3875
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320 mA100 V4 OhmsN - Channel  - 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
AO3402MI-MS


SOT-23-3L MOSFETs ROHS
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MSKSEMI 3744
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AUD 0.0254
Multiples of: 20

                   
PSMN3R4-30BLE,118


MOSFET N-channel 30 V 3.4 mo FET
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Nexperia 87
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AUD 1.5318
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120 A30 V2.95 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C178 WSmd/SmtSOT - 404 - 3ReelSi1 Channel20 V81 nCEnhancement  
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