MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK10A60D(STA4,X,M)


SC-67 MOSFETs ROHS
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Toshiba 3963
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AUD 0.8287
Multiples of: 1

                   
FDC86244-HF


SOT-23-6 MOSFETs ROHS
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KEXIN 3962
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AUD 0.1783
Multiples of: 5

                   
AONR36368-MS


30V 60A 6mΩ@10V 2.5V N Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 3962
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AUD 0.1414
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NVMFWS0D45N04XMT1G


MOSFETs 40V T10M IN SO8FL HEFET PACKAGE
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ON Semiconductor 3961
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AUD 2.7814
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469 A40 V450 uOhmsN - Channel 3.5 V- 55 C+ 175 C180 WSMD/SMTDFNW - 5Reel , Cut Tape 1 Channel+ 20 V115 nCEnhancement  
RRL025P03TR


MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2.5A
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ROHM 3959
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AUD 0.3672
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2.5 A30 V55 mOhmsP - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtTUMT6ReelSi1 Channel20 V5.2 nCEnhancement  
SI7540ADP-T1-GE3


MOSFET -20V Vds 12V Vgs PowerPAK SO-8
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Vishay 3949
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AUD 0.5302
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           Cut TapeSi     Trenchfet
AON6407-MS


30V 100A 4mΩ@10V 2.5V P Channel DFN5x6-8L MOSFETs ROHS
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MSKSEMI 3867
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AUD 0.5027
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RSR010N10HZGTL


MOSFET NCH 100V 1A SMALL SIGNAL MOSFE
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ROHM 3847
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AUD 0.3973
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1 A100 V520 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V3.5 nCEnhancementAec - Q101 
NTR4171PT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3841
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AUD 0.0401
Multiples of: 10

                   
FDP2710


MOSFET 250V N-Channel PowerTrench
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ON Semiconductor 0
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AUD 3.0375
Multiples of: 1

50 A250 V42 mOhmsN - Channel  - 55 C+ 150 C260 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Powertrench
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