MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP30H100KA


MOSFET N Channel 30V 100A(Tc) 3V @ 250uA 4.2mO @ 40A,10V TO-252 RoHS
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Quan Li 4442
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AUD 0.2938
Multiples of: 5

                   
NVD5C478NT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 3939
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AUD 1.2231
Multiples of: 1

           Cut Tape       
WST3407B


SOT-23L MOSFETs ROHS
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Winsok 3938
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AUD 0.05
Multiples of: 20

                   
40N02


20V 40A 7.5mΩ 1.2V N Channel TO-252 MOSFETs ROHS
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HL 3938
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AUD 0.0677
Multiples of: 5

                   
DMN2300UFL4-7


Mosfet Array 2 N-Channel (Dual) 20V 2.11A (Ta) 1.39W Surface Mount X2-DFN1310-6 (Type B)
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Diodes Incorporated 3938
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AUD 0.2003
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2.11 A20 V195 mOhmsN - Channel 450 mV- 55 C+ 150 C530 mWSmd/SmtX2 - DFN1310 - 6ReelSi2 Channel8 V1.6 nCEnhancement  
DMN62D1SFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS
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Diodes Incorporated 3923
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AUD 0.136
Multiples of: 5

410 mA60 V1.4 OhmsN - Channel 1.3 V- 55 C+ 150 C470 mWSmd/SmtX1 - DFN1006 - 3Tape And ReelSi1 Channel20 V2.8 nCEnhancement  
JY3401X


30V 4.2A 60m 1.2V 1PCSPChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 3918
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AUD 0.0393
Multiples of: 20

                   
AP50N04Q


PDFN-8L(3.3x3.3) MOSFETs ROHS
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Quan Li 3909
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AUD 0.1731
Multiples of: 5

                   
BSP135IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 3838
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AUD 0.2578
Multiples of: 1

120 mA600 V30 OhmsN - Channel 2.1 V- 55 C+ 150 C1.8 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V3.7 nCDepletion  
ISC027N10NM6ATMA1


MOSFET TRENCH >=100V
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Infineon 3773
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AUD 4.1298
Multiples of: 1

192 A100 V2.7 mOhmsN - Channel 3.3 V- 55 C+ 175 C217 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V58 nCEnhancement  
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