MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE9435


30V 5.1A 43mO@10V,5.1A 2.5W P Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 4243
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AUD 0.0703
Multiples of: 5

                   
PJQ44605AP-AU_R2_002A1


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit 3960
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AUD 0.44
Multiples of: 1

38 A60 V28 mOhmsP - Channel 2.5 V- 55 C+ 175 C75 WSMD/SMTDFN3333 - 8LReel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancementAEC - Q101 
TSM035NB04CZ C0G


MOSFET 40V, 157A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3854
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AUD 3.75
Multiples of: 1

157 A40 V3.5 mOhmsN - Channel 4 V- 55 C+ 150 C2 WThrough HoleTO - 220 - 2TubeSi1 Channel- 20 V , + 20 V110 nCEnhancement  
TPCJ1012


20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 3853
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AUD 0.0363
Multiples of: 10

                   
HSM4606BA


20V 5A 2W 1.2V@250uA 1PCSNChannel+1PCSPChannel SOP-8 MOSFETs ROHS
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HUASHUO 3850
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AUD 0.0725
Multiples of: 5

                   
RJK0354DSP-00#J0


MOSFET Speed Series MOSFET, 30V, SO-8, PB Free
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Renesas 3850
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AUD 1.2885
Multiples of: 1

         Smd/SmtSOP - 8Cut TapeSi      
TSM043NB04CZ C0G


MOSFET 40V, 124A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3850
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AUD 3.1923
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124 A40 V4.3 mOhmsN - Channel 4 V- 55 C+ 150 C2 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V74 nCEnhancement  
STN3N45K3


Transistor: N-MOSFET; unipolar; 450V; 0.6A; 3W; SOT223
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STMicroelectronics 3846
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AUD 0.3192
Multiples of: 5

            Supermesh      
SP4407P8


SOP-8L MOSFETs ROHS
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Siliup 3535
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AUD 0.0701
Multiples of: 5

                   
SIRS5700DP-T1-RE3


MOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062
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Vishay 2466
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AUD 2.791
Multiples of: 1

144 A150 V5.6 mOhmsN - Channel 4 V- 55 C+ 150 C278 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V73 nCEnhancement  
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