MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP45H150DHE-13


MOSFET MOSFET BVDSS: 251V-500V
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Diodes Incorporated 4414
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AUD 0.241
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250 mA450 V40 OhmsP - Channel 2 V- 55 C+ 150 C13.9 WSmd/SmtSOT - 223 - 3 Si1 Channel10 V1.8 nCEnhancement  
DMP2035UTS-13


20V 6.04A 890mW 35mO@4.5V,4A 2PCSPChannel(Common Drain) TSSOP-8 MOSFETs ROHS
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Diodes Incorporated 4414
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AUD 0.2968
Multiples of: 1

6.04 A20 V23 mOhmsP - Channel 1 V- 55 C+ 150 C890 mWSmd/SmtTSSOP - 8ReelSi2 Channel8 V15.4 nCEnhancement  
2N7002K


60V 340mA 1.3O@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 4413
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AUD 0.0116
Multiples of: 50

                   
BSS138


MOSFET N Channel 50V 0.23A 1.5V @ 250uA 3.4O @ 0.22A,10V SOT-23-3 RoHS
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HUASHUO 4413
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AUD 0.0144
Multiples of: 50

                   
BSS138K


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4413
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AUD 0.0156
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SQ4182EY-T1_BE3


MOSFET N-CHANNEL 30V
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Vishay 4410
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AUD 1.2481
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32 A30 V38 mOhmsN - Channel 2.5 V- 55 C+ 175 C7.1 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V72 nCEnhancement TrenchFET
HYG055N08NS1C2


PPAK5x6-8L MOSFETs ROHS
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HuaYi 4405
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AUD 0.4287
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IPD90N10S4L-06


Infineon Technologies MOSFET MOSFET
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Infineon 4404
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AUD 2.0627
Multiples of: 1

90 A100 V6.6 mOhmsN - Channel 1.1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V75 nCEnhancementAec - Q101 
AO4419


MOSFET P Trench 30V 9.7A 2.7V @ 250uA 20 mΩ @ 9.7A,10V SOIC-8_150mil RoHS
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Alpha & Omega 4389
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AUD 0.234
Multiples of: 5

9.7 A  P    3.1 WSurface Mount      Enhancement  
SI5403DC-T1-GE3


MOSFET 30V 6.0A 6.3W 30mohm @ 10V
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Vishay 3435
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AUD 0.4539
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6 A30 V30 mOhmsP - Channel 1 V- 55 C+ 150 C6.3 WSmd/SmtCHIP - FET - 8ReelSi1 Channel- 10 V28 nCEnhancement Trenchfet
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