MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK11S10N1L,LQ


MOSFET PWR MOSFET PD=65W F=1MHZ
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Toshiba 3799
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AUD 0.5041
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11 A100 V28 mOhmsN - Channel 1.5 V- 55 C+ 175 C65 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V15 nCEnhancement U - Mosviii - H
QS5U28TR


P-Channel 20 V 2A (Ta) 1.25W (Ta) Surface Mount TSMT5
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ROHM 3795
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AUD 0.3907
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2 A20 V125 mOhmsP - Channel  - 55 C+ 150 C1.25 WSmd/SmtT SMT - 5Tape And ReelSi1 Channel12 V Enhancement  
SISS71DN-T1-GE3


MOSFET, P-CH, -100V, -23A, POWERPAK1212
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Vishay 3795
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AUD 0.9959
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   P Channel               
IPT60R037CM8XTMA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 3795
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AUD 5.3603
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70 A600 V37 mOhmsN - Channel 4.7 V- 55 C+ 150 C390 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V79 nCEnhancement CoolMOS
IPP050N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 3792
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AUD 0.5202
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53 A30 V4.95 mOhmsN - Channel 2.35 V- 55 C+ 175 C65 WThrough Hole TubeSi1 Channel- 20 V , + 20 V21 nCEnhancement StrongIRFET
IRF7490TRPBF


N-Channel 100 V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO
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Infineon 3773
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AUD 0.5057
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5.4 A100 V39 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V37 nC   
HSM4435


MOSFET P Channel 30V 9.5A 2.5V @ 250uA 20mO @ 6A,10V SOP-8 RoHS
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HUASHUO 3734
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AUD 0.1144
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ISCH99N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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Infineon 3704
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AUD 1.164
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284 A40 V900 uOhmsN - Channel 3.15 V- 55 C+ 175 C150 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel20 V68 nCEnhancement OptiMOS
DMC2004DWK-7


20V 250mW 1PCSN-Channel&1PCSP-Channel SOT-363-6(SC-70-6) MOSFETs ROHS
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Diodes Incorporated 1440
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AUD 0.0937
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540 mA20 V550 mOhms , 900 mOhmsN - Channel, P - Channel  - 65 C+ 150 C250 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel8 V Enhancement  
NTTFSSCH1D3N04XL


MOSFETs T10S 40V PC33 SOURCE DOWN
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ON Semiconductor 151
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AUD 1.2773
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207 A40 V1.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C107 WSMD/SMTWDFN - 9Reel , Cut TapeSi1 Channel20 V28 nCEnhancement  
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