MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISC016N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4155
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AUD 0.6419
Multiples of: 1

174 A40 V1.49 mOhmsN - Channel 3.15 V- 55 C+ 175 C94 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel20 V37 nCEnhancement OptiMOS
PJQ44611AP-AU_R2_002A1


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit 4132
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AUD 0.2266
Multiples of: 1

13 A60 V84 mOhmsP - Channel 2.5 V- 55 C+ 175 C31 WSMD/SMTDFN3333 - 8Reel , Cut TapeSi - 20 V , + 20 V18 nCEnhancementAEC - Q101 
2N7002T-HAF-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-523 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 3782
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AUD 0.0195
Multiples of: 20

                   
FQB55N10TM


Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
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ON Semiconductor 3777
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AUD 1.8388
Multiples of: 1

            Qfet®      
IRF9510PBF-BE3


P-Channel 100V 4A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 3774
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AUD 0.5167
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4 A100 V1.2 OhmsP - Channel 4 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V8.7 nCEnhancement  
IAUC120N06S5N017ATMA1


MOSFET MOSFET_)40V 60V)
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Infineon 3748
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AUD 1.5778
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           Cut Tape       
DMN30H4D0L-7


Diodes Incorporated MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W
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Diodes Incorporated 3744
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AUD 0.266
Multiples of: 5

250 mA300 V4 OhmsN - Channel 1 V- 55 C+ 150 C310 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V7.6 nCEnhancement  
ISCH69N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3402
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AUD 1.4316
Multiples of: 1

357 A40 V650 uOhmsN - Channel 3.15 V- 55 C+ 175 C167 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel20 V85 nCEnhancement OptiMOS
ZXMN6A07ZTA


Trans MOSFET N-CH 60V 2.5A 4-Pin(3+Tab) SOT-89 T/R
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Diodes Incorporated 3186
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AUD 0.3579
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2.5 A60 V250 mOhmsN - Channel 1 V  2.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel10 V3.2 nCEnhancement  
DMN3030LSS-13


MOSFET NMOS SINGLE N-CHANNL 30V 9A
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Diodes Incorporated 2797
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AUD 0.2594
Multiples of: 1

9 A30 V18 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOP - 8ReelSi1 Channel25 V Enhancement  
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