MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTFWS1D9N04XMTAG


MOSFETs 40V T10M IN U8FL PACKAGE
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ON Semiconductor 4365
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AUD 0.9306
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141 A40 V1.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C74 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel+ 20 V30 nCEnhancement  
LSIC1MO120E0080


MOSFET 1200V 80mOhm SiC MOSFET
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Littelfuse 4365
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AUD 23.7077
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39 A1.2 kV80 mOhmsN - Channel 2.8 V- 55 C+ 150 C179 WThrough HoleTO - 247 - 3TubeSic1 Channel20 v , - 5 V95 nCEnhancement  
NTMFS5H600NLT1G


MOSFET T8 60V LOW COSS
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ON Semiconductor 4364
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AUD 2.7234
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250 A60 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C160 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V89 nCEnhancement  
TSM4436CS RLG


MOSFET 60V 8A Single N-Channel Power MOSFET
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Taiwan Semiconductor 4363
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AUD 0.3468
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8 A60 V30 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V10.5 nCEnhancement  
NCEP30T15GU


DFN-8(4.9x5.8) MOSFETs ROHS
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NCE Power 4363
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AUD 0.4688
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TPHR6503PL,L1Q(M


Transistor: N-MOSFET; unipolar; 20V; 130A; 170W; SOP8A
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Toshiba 4363
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AUD 1.5292
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AONR21357


30V 50A 37W 13mΩ@10V 2.5V@250uA P Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 4362
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AUD 0.2413
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MCG50P03B-TP


MOSFETs P-CHANNEL MOSFET,PDFN3333
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Micro Commercial Components (MCC) 4362
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AUD 0.7543
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50 A30 V19 mOhmsP - Channel 1.8 V- 55 C+ 150 C56 WSMD/SMTPDFN3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V38 nCEnhancement  
TQM130NB06CR RLG


MOSFET 60V 50A Single N-Channel Power MOSFET
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Taiwan Semiconductor 4360
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AUD 0.8333
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10 A60 V13 OhmsN - Channel 3.8 V- 55 C+ 175 C3.1 WSMD/SMTPDFN56U - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V40 nCEnhancementAEC - Q101 
BSC155N06NDATMA1


MOSFET TRENCH 40<-<100V
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Infineon 4360
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AUD 1.1409
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