MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD35P6LLF6


TO-252 MOSFETs ROHS
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TECH PUBLIC 3751
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AUD 0.9026
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DMT10H010LSS-13


100V 9.5mO@10V,13A 1.4W N Channel SOP-8 MOSFETs ROHS
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Diodes Incorporated 3746
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AUD 0.8718
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29.5 A100 V14.5 mOhmsN - Channel 1.4 V- 55 C+ 150 C1.9 WSmd/SmtSOIC - 8ReelSi1 Channel+/- 20 V53.7 nCEnhancement  
AUIRF3710ZS


Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
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Infineon 3746
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AUD 3.778
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            hexfet®      
TK8P60W5,RVQ


N-Channel 600 V 8A (Ta) 80W (Tc) Surface Mount DPAK
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Toshiba 3744
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AUD 1.0371
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8 A600 V440 mOhmsN - Channel 3 V- 55 C+ 150 C80 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V22 nCEnhancement Dtmosiv
IRFR5410TRRPBF


Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
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Infineon 3741
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AUD 0.9834
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            Hexfet®      
WSF40N10A


MOSFET N Trench 100V 31A (Tc) 2.5V @ 250uA 55 mΩ @ 12A,10V TO-252 RoHS
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Winsok 3740
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AUD 0.3476
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SPD07N60C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 3689
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AUD 1.4612
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   N Channel      TO - 252 - 3Reel       
ISC045N03L5SATMA1


MOSFET TRENCH <= 40V
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Infineon 3642
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AUD 0.3087
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           Cut Tape       
IPB35N10S3L26ATMA1


MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
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Infineon 2725
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AUD 1.4809
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35 A100 V20.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V39 nCEnhancementAec - Q101 
SPP20N60C3


MOSFET N Trench 650V 20.7A 3.9V @ 1mA 190 mΩ @ 13.1A,10V TO-220 (TO-220-3) RoHS
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Infineon 1788
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AUD 1.624
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20.7 A600 V190 mOhmsN - Channel  - 55 C+ 150 C208 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Coolmos
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