MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STQ1NK60ZR-AP


STMicroelectronics MOSFET
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STMicroelectronics 17446
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AUD 0.3248
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300 mA600 V15 OhmsN - Channel30 V3 V- 55 C+ 150 C3 WThrough HoleTO - 92 - 3ReelSi1 Channel10 V4.9 nCEnhancement Supermesh
FQN1N60CTA


MOSFET 600V NCH MOSFET
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ON Semiconductor 5182
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AUD 0.3185
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300 mA600 V9.3 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92Ammo PackSi1 Channel30 V Enhancement  
ASDM4406S-R


30V 13A 9mΩ@10V,12A 3.1W 1.4V@250uA 40pF@15V N Channel 610pF@15V 5nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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Ascend 3880
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AUD 0.1142
Multiples of: 5

                   
BSC079N03LSCGATMA1


MOSFET TRENCH <= 40V
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Infineon 3880
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AUD 0.1568
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           Reel       
SP30P08NK


PDFN-8L(5x6) MOSFETs ROHS
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Siliup 3880
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AUD 0.2821
Multiples of: 5

                   
STQ1HNK60R-AP


N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
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STMicroelectronics 3880
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AUD 0.3201
Multiples of: 2000

400 mA600 V8.5 OhmsN - Channel30 V - 55 C+ 150 C30 WThrough HoleTO - 92 - 3 Si1 Channel30 V Enhancement  
ZXMP7A17GTA


P-Channel 70 V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 3880
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AUD 0.4944
Multiples of: 1000

3.7 A70 V160 mOhmsP - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223ReelSi1 Channel10 V18 nCEnhancement  
STN4NF06L


STMicroelectronics MOSFET N-CH 60V 4A STripFET
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STMicroelectronics 3880
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AUD 0.5224
Multiples of: 4000

4 A60 V100 mOhmsN - Channel16 V1 V- 55 C+ 150 C3.3 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V7 nCEnhancementAec - Q101Stripfet
IRF3415PBF


MOSFET N Trench 150V 43A 4V @ 250uA 42 mΩ @ 22A,10V TO-220 (TO-220-3) RoHS
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Infineon 2416
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AUD 1.4169
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43 A150 V42 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V133.3 nC   
IRLR110TRPBF


N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 420
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AUD 0.7815
Multiples of: 1

4.3 A100 V540 mOhmsN - Channel 1 V- 55 C+ 150 C25 WSmd/SmtDPAKReelSi1 Channel5 V6.1 nCEnhancement  
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