MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISC011N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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Infineon 4222
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AUD 1.0031
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256 A40 V1.05 mOhmsN - Channel 3.15 V- 55 C+ 175 C136 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel20 V37 nCEnhancement OptiMOS
ISZ015N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3772
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AUD 0.7913
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177 A40 V1.4 mOhmsN - Channel 3.15 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel20 V37 nCEnhancement OptiMOS
RUQ050N02HZGTR


MOSFET NCH 20V 5A SMALL SIGNAL MOSFET
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ROHM 3768
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AUD 0.4972
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5 A20 V30 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel10 V12 nCEnhancementAec - Q101 
YFW30N06AD


60V 30A 35W 18mΩ@10V,25A 2.5V@250μA null TO-252-2 MOSFETs ROHS
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YFW Electronics 3767
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AUD 0.1616
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IRFR1N60ATRPBF-BE3


N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 3767
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AUD 1.2018
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1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V14 nCEnhancement  
IPL60R180P6AUMA1


Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
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Infineon 3764
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AUD 2.0687
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            Coolmos P6      
PJA3460-AU_R1_000A1


MOSFET 60V N-Channel Enhancement Mode MOSFET
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Panjit 3753
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AUD 0.1171
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DMT2004UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3531
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AUD 0.3004
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14.1 A24 V4.8 mOhmsN - Channel 550 mV- 55 C+ 150 C12.5 WSmd/SmtU - DFN2020 - F - 6Cut TapeSi1 Channel12 V53.7 nCEnhancement  
2N7002KQ-7-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 2308
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AUD 0.0111
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IPN70R1K5CEATMA1


Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
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Infineon 2265
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AUD 0.3234
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