MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQE004NE1LM7SCATMA1


MOSFETs N
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Infineon 4357
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AUD 1.9754
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58 A15 V570 uOhmsN - Channel 1.6 V- 55 C+ 150 C89 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 7 V , + 7 V29 nCEnhancement  
RQ1E070RPTR


ROHM Semiconductor MOSFET MID PWR MOSFET SER
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ROHM 4356
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AUD 0.7892
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7 A30 V12 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi1 Channel20 V50 nCEnhancement  
IPG20N06S2L-35


Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
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Infineon 4356
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AUD 0.8748
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20 A55 V35 mOhmsN - Channel   + 175 C65 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
60N02D


20V 60A 4mΩ 1.1V N Channel DFN3x3 MOSFETs ROHS
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HL 4355
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AUD 0.0953
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DMC3028LSDX-13


MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A
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Diodes Incorporated 4355
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AUD 0.475
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5.5 A , 5.8 A30 V19 mOhms , 21 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V13.2 nC , 22 nCEnhancement  
NVTFWS003N04XMTAG


MOSFETs 40V T10M IN U8FL PACKAGE
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ON Semiconductor 4355
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AUD 0.6495
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98 A40 V2.85 mOhmsN - Channel 3.5 V- 55 C+ 175 C52 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel+ 20 V16 nCEnhancement  
DMHC3025LSDQ-13


MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
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Diodes Incorporated 4355
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AUD 0.6548
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6 A , - 4.2 A30 v , - 30 V19 mOhms , 43 mOhmsN - Channel, P - Channel 1 v , - 2 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi4 Channel+/- 20 v , +/- 20 V11.7 nC , 11.4 nCEnhancementAec - Q101 
TPM603NT3


SOT-89-3 MOSFETs ROHS
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TECH PUBLIC 4353
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AUD 0.2496
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AON7508


MOSFET N-CH 30V 26A 8DFN
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Alpha & Omega 4352
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AUD 0.4993
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DMT8012LFG-7


MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
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Diodes Incorporated 4259
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AUD 0.6914
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9.5 A80 V14 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V15 nCEnhancement  
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