MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4884-MS


40V 10A 15mΩ@10V,8A 2W 1.5V@250uA 96pF@20V 2 N-Channel 964pF@20V 22.9nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 3755
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AUD 0.1593
Multiples of: 5

                   
ZVNL110GTA


100V 600mA 3O@10V,500mA 1.1W N Channel SOT-223 MOSFETs ROHS
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Diodes Incorporated 3755
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AUD 0.5812
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600 mA100 V3 OhmsN - Channel 750 mV- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V Enhancement  
RS6R060BHTB1


MOSFETs NCH 150V 60A MOSFET
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ROHM 3754
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AUD 2.2985
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60 A150 V21.8 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
SSM3K72KFS,LF(T


Transistor: N-MOSFET; unipolar; 60V; 300mA; 150mW; SC75
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Toshiba 3753
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AUD 0.0522
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RXH100N03TB1


MOSFET MOSFET
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ROHM 3723
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AUD 0.8603
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10 A30 V13 mOhmsN - Channel 2.5 V + 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
IPD030N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 3621
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AUD 0.5648
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99 A30 V3.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C83 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement StrongIRFET
STD35P6LLF6


Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK
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STMicroelectronics 3318
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AUD 0.9352
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ECH8315-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 2875
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AUD 0.4613
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- 7.5 A- 30 V25 mOhmsP - Channel     Smd/SmtECH - 8ReelSi1 Channel     
AO4828-MS


SOP-8 MOSFETs ROHS
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MSKSEMI 2774
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AUD 0.1598
Multiples of: 5

                   
FDMS86200DC


Fairchild Semiconductor MOSFET 150V20V N Channel PowerTrench MOSFET
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ON Semiconductor 1671
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AUD 3.3657
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28 A150 V14 mOhmsN - Channel20 V3.3 V- 55 C+ 150 C125 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V30 nC  Powertrench
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