MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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First...546547548549550...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ105N04NSGATMA2


MOSFETs TRENCH <= 40V
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Infineon 4313
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AUD 0.2951
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40 A40 V10.5 mOhmsN - Channel 4 V- 55 C+ 150 C35 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancement  
FQB55N10TM


Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
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ON Semiconductor 4312
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AUD 1.9556
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            Qfet®      
SH8KA4TB1


MOSFET 30V Nch+Nch Power MOSFET
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ROHM 4306
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AUD 0.8577
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9 A30 V21.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C3 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V15.5 nCEnhancement  
IQDH45N04LM6ATMA1


MOSFETs N
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Infineon 4303
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AUD 3.1938
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637 A40 V450 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement  
IQDH88N06LM5ATMA1


MOSFETs N
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Infineon 4303
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AUD 3.6185
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447 A60 V860 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V76 nCEnhancement  
IQD063N15NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 4299
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AUD 4.2079
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151 A150 V6.32 mOhmsN - Channel 4.6 V- 55 C+ 175 C333 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement OptiMOS
SIR180ADP-T1-RE3


N-Channel 60V 35A (Ta), 137A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 4298
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AUD 1.3794
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          Powerpak® SO - 8Tape And ReelMosfet (Metal Oxide)      
NTA4151PT1G


MOSFET -20V -760mA PChannel
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ON Semiconductor 4151
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AUD 0.0371
Multiples of: 10

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 75Reel       
SI3585CDV-T1-GE3


MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
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Vishay 3326
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AUD 0.2151
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2.1 A , 3.9 A20 V58 mOhms , 195 mOhmsN - Channel, P - Channel 600 mV- 55 C+ 150 C1.3 w , 1.4 WSmd/SmtTSOP - 6Cut TapeSi2 Channel4.5 V3.2 nC , 6 nCEnhancement Trenchfet
IPM018N10NM5LF2AUMA1


MOSFETs OptiMOS 5 single N-channel Linear FET 2 100 V, 176 A in 8 mm x 8 mm footprint
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Infineon 0
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AUD 6.4079
Multiples of: 1

284 A100 V1.7 mOhmsN - Channel 3.45 V- 55 C+ 175 C349 WSMD/SMTPG - HSOG - 4Reel , Cut TapeSi1 Channel20 V142 nCEnhancement OptiMOS
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