MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3009SSS-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3847
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AUD 0.3379
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15 A30 V5.5 mOhmsN - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
FDBL86363_F085


Fairchild Semiconductor MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 3846
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AUD 3.5791
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240 A80 V2 mOhmsN - Channel 2 V- 55 C+ 175 C357 WSMD/SMTTO - LL8 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V130 nCEnhancementAEC - Q101PowerTrench
BXT2800N10M


Transistor: N-MOSFET
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Bridgelux 3844
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AUD 0.0961
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IRFP4321PBF


MOSFET N Trench 150V 78A 5V @ 250uA 15.5 mΩ @ 33A,10V TO-247 (AC) RoHS
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Infineon 3831
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AUD 2.1779
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78 A150 V12 mOhmsN - Channel    310 WThrough HoleTO - 247ACTubeSi1 Channel30 V71 nC   
SiR5112DP-T1-RE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V
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Vishay 3823
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AUD 1.2839
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40.7 A100 V14.9 mOhmsN - Channel  - 55 C+ 150 C52 WSMD/SMTPOWERPAK SO - 8 Si1 Channel 10.6 nCEnhancement  
Si2302CDS-T1-E3-HXY


20V 2.3A 48m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 3821
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AUD 0.021
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AO4411(UMW)


SOP-8 MOSFETs ROHS
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Youtai 3768
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AUD 0.0879
Multiples of: 5

                   
RSR020P05HZGTL


MOSFET PCH -45V -2A SMALL SIGNAL MOSF
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ROHM 3690
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AUD 0.3645
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2 A45 V190 mOhmsP - Channel - 3 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V4.5 nCEnhancementAec - Q101 
RRR040P03HZGTL


P-Channel 30V 4A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 3599
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AUD 0.4942
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4 A30 V45 mOhmsP - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.5 nCEnhancementAEC - Q101 
PSMN030-60YS,115


NXP Semiconductors MOSFET Single N-Channel 60V 116A 56W 49.6mOhms
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Nexperia 255
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AUD 0.3513
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21 A54 V49.6 mOhmsN - Channel 3 V- 55 C+ 175 C56 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V13 nCEnhancement  
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