MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD770N15A


Fairchild Semiconductor MOSFET 150V18V N Channel PowerTrench MOSFET
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ON Semiconductor 4251
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AUD 0.8276
Multiples of: 1

18 A150 V61 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C56.8 WSmd/SmtDPAK - 3ReelSi1 Channel20 V8.4 nC  Powertrench
2N7002K-T1-GE3-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 4248
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AUD 0.0174
Multiples of: 20

                   
2N7002KWX


SOT323 MOSFETs ROHS
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Shenzhen JingYang 4248
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AUD 0.0227
Multiples of: 20

                   
TSM4NB65CP ROG


MOSFET 650V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4248
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AUD 0.0256
Multiples of: 1

4 A650 V2.7 OhmsN - Channel 3.6 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V13.46 nCEnhancement  
WPM2031-3/TR


20V 600mA 495mΩ@4.5V,450mA 360mW P Channel SOT-723 MOSFETs ROHS
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Will Semiconductor 4248
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AUD 0.0624
Multiples of: 10

                   
60P03D


30V 55A 7.5mΩ 2.5V P Channel DFN3x3 MOSFETs ROHS
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HL 4248
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AUD 0.1259
Multiples of: 5

                   
ZXMN10A25KTC


Diodes Incorporated MOSFET N-Chan 100V MOSFET (UMOS)
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Diodes Incorporated 4244
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AUD 0.866
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6.4 A100 V125 mOhmsN - Channel20 V4 V- 55 C+ 150 C2.11 WSmd/SmtTO - 252 - 2ReelSi1 Channel20 V9.6 nCEnhancement  
RD3R05BBHTL1


MOSFETs RD3R05BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.
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ROHM 4244
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AUD 2.7937
Multiples of: 1

50 A150 V35 mOhmsN - Channel 4 V- 55 C+ 150 C89 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V37 nCEnhancement  
DMC3016LSD-13


MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
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Diodes Incorporated 4238
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AUD 0.2741
Multiples of: 1

8.2 A , 6.2 A30 V15 mOhms , 30 mOhmsN - Channel, P - Channel 2.3 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V11.3 nC , 10.9 nCEnhancement  
LND150N3-G-P003


Microchip Technology MOSFET DepletionMode MOSFET
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Microchip 4209
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AUD 0.8451
Multiples of: 1

30 mA500 V1000 OhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Reel 1 Channel20 V Depletion  
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