MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOD4185(UMW)


TO-252 MOSFETs ROHS
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Youtai 3665
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AUD 0.1558
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SCH1433-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 3664
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AUD 0.1954
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3.5 A20 V149 mOhmsN - Channel 400 mV + 150 C800 mWSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 10 V2.8 nCEnhancement  
NTMS10P02R2G


20V 13A 15mO@4.5V,5.6A 19W P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 3664
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AUD 0.3498
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LRC6N33YT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V DFN 2020-6D RoHS
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Leshan 3661
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AUD 0.0677
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SI8483DB-T2-E1


MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III
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Vishay 3659
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AUD 0.1624
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16 A12 V22 mOhmsP - Channel 800 mV- 55 C+ 150 C13 WSmd/SmtMICRO - FOOT 1.5 x 1ReelSi1 Channel10 V65 nCEnhancement Trenchfet
IXTP26P20P


P-Channel 200 V 26A (Tc) 300W (Tc) Through Hole TO-220-3
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IXYS 3653
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AUD 6.2224
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26 A200 V170 mOhmsP - Channel 2 V- 55 C+ 150 C300 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V56 nCEnhancement  
BSO201SP H


MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P
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Infineon 3535
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AUD 1.036
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14.9 A20 V6.7 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtPG - DSO - 8ReelSi1 Channel12 V- 88 nCEnhancement Optimos
MCQD09P04-TP


MOSFETs DUAL P-CHANNEL MOSFET, SOP-8
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Micro Commercial Components (MCC) 3029
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AUD 0.88
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9 A40 V21 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.7 WSMD/SMT Reel , Cut TapeSi2 Channel- 20 V , + 20 V75 nCEnhancement  
DMC4040SSD-13


MOSFET MOSFET COMP NPN
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Diodes Incorporated 2208
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AUD 0.4843
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7.5 A40 V25 mOhms , 25 mOhmsN - Channel, P - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOIC - 8Cut TapeSi2 Channel10 V37.6 nC , 33.7 nCEnhancement  
JMTQ35N06A


60V 35A 41W 12m@10V,30A 1.6V@250uA 1PCSNChannel PDFN-8L(3.3x3.3) MOSFETs ROHS
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JieJie 1227
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AUD 0.1636
Multiples of: 5

                   
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