MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6L35FE,LM


Mosfet Array N and P-Channel 20V 180mA, 100mA 150mW Surface Mount ES6
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Toshiba 5224
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AUD 0.0772
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180 mA , - 100 mA20 v , - 20 V20 Ohms , 44 OhmsN - Channel, P - Channel 400 mV , - 400 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel+/- 10 v , +/- 10 V Enhancement  
BUK7675-55A,118


NXP Semiconductors MOSFET TAPE13 PWR-MOS
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Nexperia 3611
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AUD 0.793
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20.3 A55 V75 mOhmsN - Channel  - 55 C+ 175 C62 WSmd/SmtSOT - 404 - 3ReelSi1 Channel20 V Enhancement  
WSD30L120DN56


MOSFET P Trench 30V 120A (Tc) 2.5V @ 250uA 3.6 mΩ @ 30A,10V DFN 5x6-8 RoHS
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Winsok 3610
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AUD 0.9226
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WST2304A


SOT-23 MOSFETs ROHS
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Winsok 3609
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AUD 0.0434
Multiples of: 10

                   
WTM3401


30V 4.2A 55mO@10V,4.2A 1.2W P Channel SOT-23-3L MOSFETs ROHS
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WPMtek 3608
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AUD 0.0234
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KM3139K


20V 660mA 510mΩ@4.5V,0.5A 150mW 800mV@250uA P Channel SOT-723 MOSFETs ROHS
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Yongyutai Electronics 3608
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AUD 0.028
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SSM6K405TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=2.0A RDSON=0.126Ohm @ 4V in UF6 package
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Toshiba 3606
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AUD 0.1635
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2 A20 V126 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V3.4 nCEnhancement U - Mosiii
DI7A6N10SQ


MOSFETs MOSFET, SO-8, 100V, 7.6A, 150C, N
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Diotec 3588
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AUD 0.5319
Multiples of: 1

7.6 A100 V20 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancement  
IPT039N15N5ATMA1


MOSFET
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Infineon 3506
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AUD 3.694
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190 A150 V4.3 mOhmsN - Channel 4.6 V- 55 C+ 175 C319 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V78 nCEnhancement  
BSS138


MOSFET N Trench 50V 220mA 1.6V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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AnBon 3492
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AUD 0.026
Multiples of: 20

                   
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