MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQD063N15NM5CGATMA1


MOSFETs N
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Infineon 4201
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AUD 4.1354
Multiples of: 1

148 A150 V6.32 OhmsN - Channel 3 V- 55 C+ 150 C278 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 10 V , + 10 V48 nCEnhancement  
JMTQ170C04D


DFN-8(3x3) MOSFETs ROHS
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JieJie 4200
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AUD 0.1647
Multiples of: 5

                   
IQD020N10NM5ATMA1


MOSFETs N
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Infineon 4198
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AUD 3.84
Multiples of: 1

276 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement  
BSC084P03NS3E G


Infineon Technologies MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
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Infineon 4197
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AUD 0.8652
Multiples of: 1

78.6 A30 V8.4 mOhmsp - channel  - 55 C+ 150 C69 Wsmd/smtTDSON - 8Reelsi1 channel25 V43.4 nC  optimos
WPM2341-MS


SOT-23-3 MOSFETs ROHS
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MSKSEMI 4195
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AUD 0.0671
Multiples of: 10

                   
AOD4130


TO-252 MOSFETs ROHS
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Youtai 4195
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AUD 0.1668
Multiples of: 5

                   
SQD19P06-60L-GE3-VB


60V 25A 46mΩ@10V P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 4194
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AUD 0.4879
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1N65G


MOSFET N Trench 650V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS
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Youtai 4192
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AUD 0.1022
Multiples of: 5

                   
FDS8638


MOSFET 40/20V, N Chan PowerTrench
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ON Semiconductor 4095
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AUD 0.8922
Multiples of: 1

18 A40 V4.3 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
DMP6050SSD-13


Diodes Incorporated MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
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Diodes Incorporated 3130
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AUD 0.55
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11.3 A60 V55 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8ReelSi2 Channel- 10 V24 nCEnhancement  
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