MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MSK50N03DF


30V 46A 29W 8mΩ@10V,20A 2.5V@250uA 131pF@15V N Channel 1317pF@15V 12.8nC@4.5 -55℃~+150℃@(Tj) DFN3X3-8L MOSFETs ROHS
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MSKSEMI 3821
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AUD 0.322
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DI4A7P06SQ2


MOSFETs MOSFET, SO-8, -60V, -4.7A, 150C, P
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Diotec 3817
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AUD 0.5237
Multiples of: 1

4.7 A60 V75 mOhmsN - Channel 2.3 V- 55 C+ 155 C3 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.5 nCEnhancement  
FDT3612


MOSFET 100V NCh PowerTrench
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ON Semiconductor 3816
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AUD 0.4304
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3.7 A100 V88 mOhmsN - Channel  - 55 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement Powertrench
FQU2N90TU_WS


Fairchild Semiconductor MOSFET 900V 1.6A 7.8Ohm N-Channel
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ON Semiconductor 3815
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AUD 1.1077
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1.7 A900 V7.2 OhmsN - Channel30 V - 55 C+ 150 C2.5 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement  
IPD30N06S2L13ATMA4


MOSFET N-CHANNEL_55/60V
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Infineon 3814
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AUD 1.031
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30 A55 V13 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V54 nCEnhancementAec - Q101 
NCE55P30K


MOSFET P Trench 55V 30A 4V @ 250uA 40 mΩ @ 15A,10V TO-252-2 (DPAK) RoHS
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NCE Power 3812
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AUD 0.6448
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MOT3150J


30V 65A 65W 4.5m@10V,20A 2.5V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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MOT 3807
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AUD 0.1318
Multiples of: 5

                   
STN3NF06


MOSFET N-Ch 30 Volt 3 Amp
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STMicroelectronics 3767
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AUD 0.4952
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
WSP4805


MOSFET 2 P Channel (Dual) 30V 8A (Tc) 2V @ 250uA 19 mΩ @ 8A,10V SOP-8_150mil RoHS
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Winsok 3711
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AUD 0.3008
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JMSH1006AG-13


PDFN5x6 MOSFETs ROHS
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JieJie 3456
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AUD 0.4586
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