MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK7K89-100EX


MOSFET BUK7K89-100E/LFPAK56D/REEL 7
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Nexperia 6046
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AUD 0.5648
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13 A , 13 A100 v , 100 V61 mOhms , 61 mOhmsN - Channel 2.4 v , 2.4 V- 55 C+ 175 C38 WSmd/SmtLFPAK56D - 8ReelSi2 Channel20 v , 20 V13.6 nC , 13.6 nCEnhancement  
BSC0704LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 3604
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AUD 0.4597
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           Cut Tape       
BSH203.215


Transistor: P-MOSFET; unipolar; -30V; -0.3A; 170mW; SOT23
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Nexperia 3598
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AUD 0.2267
Multiples of: 5

                   
BS107P


200V 120mA 30O@5V,100mA 500mW N Channel TO-92-3 MOSFETs ROHS
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Diodes Incorporated 3595
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AUD 0.3644
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120 mA200 V30 Ohmsn - channel 1 V- 55 C+ 150 C500 mWthrough holeTO - 92 - 3Bulksi1 channel5 V enhancement  
IPD038N06NF2SATMA1


MOSFET TRENCH 40<-<100V
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Infineon 3590
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AUD 0.5812
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120 A60 V3.85 mOhmsN - Channel 2.1 V- 55 C+ 175 C107 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement StrongIRFET
PSMN015-60BS,118


MOSFET N-CH 60 V 14.8 MOHM MOSFET
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Nexperia 3588
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AUD 0.8849
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50 A60 V14.8 mOhmsN - Channel 2 V- 55 C+ 175 C86 WThrough HoleD2PAKReelSi1 Channel10 V20.9 nCEnhancement  
DMNH6021SK3Q-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3507
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AUD 0.5418
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         Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
FDS6986AS


MOSFET 30V Dual SyncFET
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ON Semiconductor 3201
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AUD 0.6993
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6.5 A30 V20 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel16 v , 20 V Enhancement Powertrench Syncfet
SE2301


MOSFET P Trench 20V 2.8A 450mV @ 250uA（Min） 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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SINO-IC 1901
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AUD 0.0288
Multiples of: 20

                   
IAUCN08S7N019ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 1638
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AUD 1.691
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200 A80 V2.3 mOhmsN - Channel 3.2 V- 55 C+ 175 C169 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V63 nCEnhancementAEC - Q101OptiMOS
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