MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ5E040AJTCL


MOSFET NPN Low VCE(sat) Transistor
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ROHM 4191
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AUD 0.2497
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4 A30 V27 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel+/- 12 V Enhancement  
BSS83PH6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 4190
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AUD 0.1442
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330 mA60 V1.4 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V3.57 nCEnhancementAec - Q101 
NTJS4405NT1G


ON Semiconductor MOSFET 25V 1.2A N-Channel
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ON Semiconductor 4187
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AUD 0.0499
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1.2 A25 V299 mOhmsN - Channel  - 55 C+ 150 C630 mWSmd/SmtSC - 88 - 6ReelSi1 Channel8 V Enhancement  
ISC130N20NM6ATMA1


MOSFETs N
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Infineon 4187
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AUD 4.9292
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88 A200 V13 mOhmsN - Channel 4.5 V- 55 C+ 175 C242 WSMD/SMTTSON - 8 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
SI7540ADP-T1-GE3


MOSFET -20V Vds 12V Vgs PowerPAK SO-8
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Vishay 4180
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AUD 1.5065
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           Cut TapeSi     Trenchfet
PT3400


SOT-23 MOSFETs ROHS
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PUOLOP 4176
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AUD 0.0353
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PSMN7R5-60YLX


MOSFET PSMN7R5-60YL/LFPAK/REEL 7" Q1/
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Nexperia 4176
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AUD 0.6129
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86 A60 V6 mOhmsN - Channel 1.4 V- 55 C+ 175 C147 WSmd/SmtLFPAK56 - 5Cut TapeSi1 Channel20 V60.6 nCEnhancement  
HYG025N06LS1C2


60V 170A 2.1mΩ@10V,20A 130W 2.1V@250uA 10.2pF@25V N Channel 3.915nF@25V 28.2nC@10V +175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 4175
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AUD 0.5236
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DMN6013LFGQ-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 4173
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AUD 0.6095
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45 A60 V9.3 mOhmsN - Channel 1 V- 55 C+ 150 C40 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V55.4 nCEnhancementAec - Q101 
IRL540NPBF


MOSFET N Trench 100V 36A 2V @ 250uA 44 mΩ @ 18A,10V TO-220 (TO-220-3) RoHS
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Infineon 3515
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AUD 0.7962
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36 A100 V44 mOhmsN - Channel 2 V- 55 C+ 175 C140 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V49.3 nC   
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