MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON3611-HXY


30V 20A 10.8W 1PCSN-Channel&1PCSP-Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 5466
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AUD 0.1457
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SI7898DP-T1-GE3


MOSFET 150V 4.8A 5.0W 85mohm @ 10V
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Vishay 3905
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AUD 1.3764
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4.8 A150 V85 mOhmsN - Channel 2 V- 55 C+ 150 C5 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V17 nCEnhancement Trenchfet
CSD25211W1015


Texas Instruments MOSFET PCh NexFET Power MOSFET
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Texas Instruments 3524
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AUD 0.2512
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- 3.2 A- 20 V33 mOhmsP - Channel - 800 mV- 55 C+ 150 C1 WSmd/SmtDSBGA - 6ReelSi1 Channel- 6 V3.4 nC  Nexfet
BSC011N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
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Infineon 3522
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AUD 0.903
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            Optimos      
LND01K1-G


N-Channel 9 V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5
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Microchip 3516
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AUD 0.6616
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330 mA9 V1.4 OhmsN - Channel0.6 V  + 125 C360 mWSmd/SmtSOT - 23 - 5ReelSi1 Channel600 mV Depletion  
IPP023N10N5


Infineon Technologies MOSFET N-Ch 100V 120A TO220-3
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Infineon 3487
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AUD 3.3716
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120 A100 V2 mOhmsN - Channel 3 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3Tube-1 Channel+/- 20 V168 nCEnhancement Optimos
WSF35P06


60V 13.5A 80mΩ@10V,3A 31.3W P Channel TO-252-3 MOSFETs ROHS
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Winsok 3382
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AUD 0.3478
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RSU002P03T106


MOSFET P-CH 30V 200MA SOT-323
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ROHM 3368
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AUD 0.2003
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200 mA30 V1.6 OhmsP - Channel 2.5 V + 150 C200 mWSmd/SmtUMT - 3ReelSi1 Channel20 V Enhancement  
HYG022N10NS1TA


100V 249A 312W 2.2mΩ@10V,50A 3.1V@250uA N Channel TOLL MOSFETs ROHS
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HuaYi 2240
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AUD 1.1634
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DMN3007LSSQ-13


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 2022
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AUD 0.3842
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16 A30 V5 mOhmsN - Channel 1.3 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V64.2 nCEnhancementAec - Q101 
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