MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84


SOT-23 MOSFETs ROHS
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Hottech 4122
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AUD 0.0169
Multiples of: 50

                   
LP2371LT1G


100V 1A 1.4@3.5V,1A 1PCSPChannel SOT-23E MOSFETs ROHS
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Leshan 4122
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AUD 0.0868
Multiples of: 10

                   
SK3134K


SOT-723 MOSFETs ROHS
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Shikues 4121
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AUD 0.0255
Multiples of: 20

                   
IRF9358TRPBF


SOP-8 MOSFETs ROHS
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TECH PUBLIC 4117
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AUD 0.3313
Multiples of: 1

                   
BSC026NE2LS5


MOSFET TRENCH <= 40V
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Infineon 4115
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AUD 1.1857
Multiples of: 1

                   
QH8MA3TCR


MOSFET 30V N+P Ch MOSFET
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ROHM 4113
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AUD 0.4313
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7 A , 5.5 A30 v , - 30 V22 mOhms , 37 mOhmsN - Channel, P - Channel 1 v , - 2.5 V- 55 C+ 150 C2.5 WSmd/SmtT SMT - 8ReelSi2 Channel+/- 20 v , +/- 20 V7.2 nC , 10 nCEnhancement  
BSZ067N06LS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
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Infineon 4105
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AUD 0.8573
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            Optimos 3      
RD3U080AAFRATL


MOSFET MOSFET
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ROHM 4105
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AUD 1.6374
Multiples of: 1

8 A250 V300 mOhmsN - Channel 5 V- 55 C+ 150 C85 WSMD/SMTDPAK - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V25 nCEnhancementAEC - Q101 
BSS138


SOT-23 MOSFETs ROHS
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Panjit 4103
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AUD 0.0424
Multiples of: 10

                   
FH3060G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong 4103
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AUD 0.1204
Multiples of: 5

                   
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