MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPTC011N08NM5ATMA1


MOSFETs N
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Infineon 3839
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AUD 3.8418
Multiples of: 1

408 A80 V1.1 mOhmsN - Channel 3.8 V- 55 C+ 175 C3.8 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V223 nCEnhancement  
DMC3021LSD-13


Mosfet Array N and P-Channel 30V 8.5A, 7A 2.5W Surface Mount 8-SO
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Diodes Incorporated 3479
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AUD 0.2955
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8.5 A , 7 A30 V21 mOhms , 39 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8Cut TapeSi2 Channel10 V7.8 nC , 21.1 nCEnhancement  
FDD86381_F085


MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET
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ON Semiconductor 3476
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AUD 0.485
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25 A80 V45 mOhmsN - Channel 2 V- 55 C+ 175 C48.4 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V14 nCEnhancement  
TSM4NB60CP ROG


MOSFET 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3476
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AUD 1.8
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4 A600 V2.2 OhmsN - Channel 3.5 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V14.5 nCEnhancement  
FDPC8014AS


MOSFET PT9 N 30/12 & PT9 N 25/12S inPowerClip56
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ON Semiconductor 3475
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AUD 2.0001
Multiples of: 1

59 A , 159 A25 v , 25 V5.3 mOhms , 1.5 mOhmsN - Channel 800 mV , 1 V- 55 C+ 150 C21 w , 37 WSmd/SmtPowerclip - 56 - 8ReelSi2 Channel+/- 12 v , +/- 12 V25 nC , 97 nCEnhancement Syncfet Power Clip
AO3419


20V 5A 43mO@4.5V,5A P Channel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 3474
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AUD 0.0673
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WSF07N10


100V 7A 195mO@10V,1A 1.25W N Channel TO-252-2 MOSFETs ROHS
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Winsok 3470
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AUD 0.183
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BSC076N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 3467
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AUD 0.7519
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50 A60 V6.2 mOhmsN - Channel 2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V50 nCEnhancement Optimos
CSD87351Q5D


MOSFET Synch Buck NexFET Power Block
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Texas Instruments 3467
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AUD 1.4858
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32 A30 V7.4 mOhms , 1.6 mOhmsN - channel  - 55 C+ 150 C12 WSmd/smtSON - 8ReelSi2 Channel10 V   Nexfet
BSC012N06NSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 1753
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AUD 2.4299
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100 A60 V1.2 mOhmsN - Channel 2.1 V- 55 C+ 175 C214 WSmd/SmtTSON - 8Cut TapeSi1 Channel20 V143 nCEnhancement Optimos 5
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