MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC7672


MOSFET N-Chan 30/20V PowerTrench
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ON Semiconductor 4074
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AUD 0.7087
Multiples of: 1

16.9 A30 V5.5 mOhmsN - Channel  - 55 C+ 150 C2.3 WSmd/SmtMLPReelSi1 Channel20 V Enhancement  
WGU7N65SE


TO-251 MOSFETs ROHS
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Wild Goose 4074
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AUD 0.2164
Multiples of: 5

                   
STP20NK50Z


N-Channel 500 V 17A (Tc) 190W (Tc) Through Hole TO-220
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STMicroelectronics 4074
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AUD 1.9264
Multiples of: 50

17 A500 V270 mOhmsN - Channel 3 V- 55 C+ 150 C190 WThrough HoleTO - 220TubeSi1 Channel10 V85 nCEnhancement Supermesh
STW5NK100Z


Transistor: N-MOSFET; unipolar; 1000V; 2.2A; 125W; TO247-3
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STMicroelectronics 4074
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AUD 2.879
Multiples of: 600

            Mdmesh      
HKTD90N03


TO-252 MOSFETs ROHS
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Hottech 4070
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AUD 0.1585
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IPD33CN10NGATMA1


Infineon Technologies MOSFET
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Infineon 4068
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AUD 0.6425
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27 A100 V25 mOhmsN - Channel+/- 20 V3 V- 55 C+ 175 C58 WSmd/SmtTO - 252 - 3Reel-  18 nCEnhancement  
IPD50P03P4L11ATMA2


P-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-11
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Infineon 4066
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AUD 0.6862
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
DMP2160UW-7


MOSFET SINGLE P-CHANNEL
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Diodes Incorporated 3996
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AUD 0.0825
Multiples of: 10

1.5 A20 V100 mOhmsp - channel 400 mV- 55 C+ 150 C350 mWsmd/smtSOT - 323 - 3Cut Tapesi1 channel4.5 V enhancement  
IPD600N25N3GATMA1


MOSFET TRENCH >=100V
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Infineon 3298
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AUD 1.8333
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FDS6681Z


Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
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ON Semiconductor 1894
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AUD 0.7774
Multiples of: 1

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