MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3402


30V 4A 47mΩ@4.5V,4A 1.4W 1.4V@250uA N Channel SOT-23-3L MOSFETs ROHS
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MSKSEMI 3482
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AUD 0.0389
Multiples of: 10

                   
SQ4425EY-T1_BE3


MOSFET P-CHANNEL 30 V
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Vishay 3467
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AUD 1.5808
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18 A30 V9 mOhmsP - Channel 2.5 V- 55 C+ 175 C6.8 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
HXY4402S


20V 20A 5.5mΩ@4.5V,20A N Channel SOP-8 MOSFETs ROHS
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HXY MOS 3465
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AUD 0.0866
Multiples of: 1

                   
ZVN4206GTC


Diodes Incorporated MOSFET N-Chnl 60V
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Diodes Incorporated 3457
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AUD 0.5812
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1 A60 V1.5 OhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Tape And ReelSi1 Channel20 V Enhancement  
2N7002K


1.6V 4A 11Ω@10V,500mA 1.6V null SOT-23 MOSFETs ROHS
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LGE 3453
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AUD 0.0185
Multiples of: 20

                   
Hot DMP2130LDM-7


P-Channel 20 V 3.4A (Ta) 1.25W Surface Mount SOT-26
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Diodes Incorporated 3453
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AUD 0.1253
Multiples of: 5

3.4 A20 V80 mOhmsP - Channel  - 55 C+ 150 C1.25 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel12 V Enhancement  
SPD18P06P G


MOSFET P-CH 60V 18.6A
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Infineon 3351
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AUD 0.706
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18.6 A60 V130 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252ReelSi1 Channel10 V22 nCEnhancement Sipmos
DMN2009USS-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3265
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AUD 0.3694
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12.1 A20 V12 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtSO - 8Cut TapeSi1 Channel12 V34 nCEnhancement  
TK20V60W5,LVQ


N-Channel 600 V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8)
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Toshiba 2489
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AUD 2.8239
Multiples of: 1

20 A600 V156 mOhmsN - Channel 3 V- 55 C+ 150 C156 WSmd/SmtDFN - 5ReelSi1 Channel30 V55 nCEnhancement  
IRF5803TRPBF-TP


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 2172
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AUD 0.1344
Multiples of: 5

                   
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