MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD50P03P4L11ATMA2


P-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-11
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Infineon 3744
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AUD 0.6764
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
TK8P60W5,RVQ


N-Channel 600 V 8A (Ta) 80W (Tc) Surface Mount DPAK
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Toshiba 3744
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AUD 1.2063
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8 A600 V440 mOhmsN - Channel 3 V- 55 C+ 150 C80 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V22 nCEnhancement Dtmosiv
SP1022CP8


100V 2.5A 1 N-Channel + 1 P-Channel SOP-8 MOSFETs ROHS
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Siliup 3739
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AUD 0.1481
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ISA170230C04LMDSXTMA1


MOSFETs OptiMOS Dual power MOSFET 40V
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Infineon 3736
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AUD 0.7257
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8.8 A , 9.6 A40 V17 mOhms , 23 mOhmsN - Channel, P - Channel 2.7 V- 55 C+ 150 C2.5 WSMD/SMTDSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V13 nC , 12.6 nCEnhancement OptiMOS
IRFR120TRRPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 3736
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AUD 0.9729
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V16 nCEnhancement  
TPM40V5NS3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3724
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AUD 0.1096
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SI2323DS


SOT-23 MOSFETs ROHS
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GOODWORK 3220
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AUD 0.0457
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FDS4435


30V 12A 11mΩ@10V 3W P Channel SOP-8 MOSFETs ROHS
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Tokmas 1516
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AUD 0.1155
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VN10LP


MOSFET N Chnl. 60V
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Diodes Incorporated 754
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AUD 0.7188
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270 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
STP3N150


Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
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STMicroelectronics 485
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AUD 5.2799
Multiples of: 50

                   
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