MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJQ30N03A


30V 30A 5.8mΩ@10V,15A 21W N Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Yangjie 4140
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AUD 0.1412
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IPD80R3K3P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3
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Infineon 4140
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AUD 0.433
Multiples of: 1

            Coolmos P7      
SWSA1N60DC


600V 1A SOT-223 MOSFETs ROHS
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Sam&wing 4137
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AUD 0.1321
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NTR4101PT1H


ON Semiconductor MOSFET
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ON Semiconductor 4136
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AUD 0.2252
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- 3.2 A- 20 V112 mOhmsP - Channel - 0.72 V- 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V7.5 nC   
IRF60B217


MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg
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Infineon 4134
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AUD 1.0097
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60 A60 V7.3 mOhmsn - channel 2.1 V- 55 C+ 175 C83 Wthrough holeTO - 220 - 3Tubesi1 channel+/- 20 V44 nCenhancement strongirfet
NCE55P15K


MOSFET P Trench 55V 15A 3.5V @ 250uA 75 mΩ @ 5A,10V TO-252-2 (DPAK) RoHS
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NCE Power 4132
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AUD 0.2186
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2N7000


MOSFET N-CHANNEL 60V 200mA
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NTE 4131
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AUD 0.7104
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   N - Channel  - 55 C150 C Through Hole Bulk       
DMN3020UTS-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 4130
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AUD 0.2776
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15 A30 V15 mOhmsN - Channel 400 mV- 55 C+ 150 C1.4 WSmd/SmtTSSOP - 8Cut TapeSi1 Channel4.5 V15 nCEnhancement  
WSF3013B


TO-252-4 MOSFETs ROHS
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Winsok 4125
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AUD 0.2237
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DMC2700UDMQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4123
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AUD 0.1729
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1.34 A , 1.14 A20 V300 mOhms , 500 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C1.12 W   Si2 Channel4.5 V736.6 pC , 622.4 pCEnhancementAec - Q101 
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