MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6009ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 3586
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AUD 2.5192
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9 A600 V535 mOhmsN - Channel 4 V- 55 C+ 155 C48 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V23 nCEnhancement  
SSM6J213FE(TE85L,F


Toshiba MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF
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Toshiba 3585
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AUD 0.4366
Multiples of: 1

- 2.6 A- 20 V250 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V4.7 nC   
DMC3025LSD-13


Mosfet Array N and P-Channel 30V 6.5A, 4.2A 1.2W Surface Mount 8-SO
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Diodes Incorporated 3584
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AUD 0.1747
Multiples of: 5

6.5 A , 4.2 A30 V15 mOhms , 38 mOhmsN - Channel, P - Channel 1 v , 2 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V9.8 nC , 10.5 nCEnhancement  
AP85N04Q


40V 65A 5mΩ@20V,65A null PDFN-8L(3x3) MOSFETs ROHS
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Quan Li 3584
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AUD 0.372
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FDML7610S


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 3580
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AUD 0.9342
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30 A30 V7.5 mOhmsN - Channel  - 55 C+ 150 C2.2 WSmd/SmtMLP 3 x 4.5ReelSi2 Channel20 V20 nC , 43 nC  Power Stage Powertrench Syncfet
AON7408


MOSFET DFN_3x3mm RoHS
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Alpha & Omega 3545
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AUD 0.1481
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DMN3024LSS-13


Diodes Incorporated MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
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Diodes Incorporated 3476
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AUD 0.3448
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7.2 A30 V36 mOhmsN - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel20 V12.9 nCEnhancement  
DMTH45M5LPSWQ-13


MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
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Diodes Incorporated 3362
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AUD 0.5418
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           Reel , Cut TapeSi      
IAUS300N08S5N012TATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 3252
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AUD 4.4657
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300 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V178 nCEnhancement  
IPD60N10S412ATMA1


MOSFET N-CHANNEL 100+
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Infineon 2231
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AUD 0.8948
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 600 V N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
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