MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3456DDV-T1-E3


Vishay Semiconductors MOSFET 30V 6.3A 2.7W 40mohm 10V
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Vishay 5367
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AUD 0.1494
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5 A30 V40 mOhmsN - Channel20 V - 55 C+ 150 C1.7 WSmd/SmtTSOP - 6ReelSi   Enhancement Trenchfet
DMN63D8LW-13


MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
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Diodes Incorporated 3569
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AUD 0.0332
Multiples of: 20

380 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
DMC3032LSD-13


MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET
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Diodes Incorporated 3555
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AUD 0.2463
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8.1 A , 7 A30 V32 Ohms , 39 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8Cut TapeSi2 Channel10 V9.2 nC , 21.1 nCEnhancement  
DMN53D0LDW-7


MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
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Diodes Incorporated 3554
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AUD 0.064
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360 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V0.6 nC , 0.6 nCEnhancement  
LGE2312


Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
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Luguang 3545
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AUD 0.1044
Multiples of: 5

                   
TM08G04S


SOP-8 MOSFETs ROHS
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Tritech-MOS 3545
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AUD 0.1232
Multiples of: 5

                   
IRFR320TRPBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 3538
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AUD 0.5128
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3.1 A400 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtDPAKReelSi1 Channel10 V20 nCEnhancement  
TPN5900CNH,L1Q


MOSFET UMOSVIII 150V 59mOhm VGS=10V TSON-ADV
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Toshiba 3413
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AUD 0.7352
Multiples of: 1

18 A150 V50 mOhmsN - Channel 4 V- 55 C+ 150 C39 WSmd/SmtTSON - ADVANCE - 8Cut TapeSi1 Channel20 V7 nCEnhancement U - Mosviii - H
BUK9Y153-100E,115


N-Channel 100 V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 81
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AUD 0.2742
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9.4 A100 V122 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V6.8 nCEnhancement  
IQD020N10NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 55
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AUD 3.7925
Multiples of: 1

276 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement OptiMOS
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