MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG1012T-13


MOSFET 20V N-Ch Enhance Mode MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 23485
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AUD 0.0576
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630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C0.28 WSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel6 V736.6 nCEnhancement  
BSC0802LSATMA1


TDSON-8(5.1x5.9) MOSFETs ROHS
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Infineon 4667
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AUD 2.5667
Multiples of: 1

100 A100 V3.5 mOhmsN - Channel 2.3 V- 55 C+ 150 C156 WSMD/SMTTDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V37 nCEnhancement  
LND01K1-G


N-Channel 9 V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5
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Microchip 4100
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AUD 0.7037
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330 mA9 V1.4 OhmsN - Channel0.6 V  + 125 C360 mWSmd/SmtSOT - 23 - 5ReelSi1 Channel600 mV Depletion  
WST3414


MOSFET N Trench 20V 6A (Tc) 1V @ 250uA 30 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 4098
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AUD 0.0575
Multiples of: 10

                   
2N7002K


1.6V 4A 11Ω@10V,500mA 1.6V null SOT-23 MOSFETs ROHS
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LGE 4093
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AUD 0.0212
Multiples of: 20

                   
STF7NM60N


Transistor: N-MOSFET; unipolar; 600V; 3A; 20W; TO220FP
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STMicroelectronics 4087
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AUD 2.0973
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            Mdmesh      
FDD8444L_F085


Fairchild Semiconductor MOSFET 40V N-Channel PowerTrench
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ON Semiconductor 4086
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AUD 2.3385
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16 A40 V5.2 OhmsN - Channel20 V - 55 C+ 175 C153 WSmd/SmtDPAK - 2ReelSi1 Channel20 V Enhancement Powertrench
TPM9305PS3-1


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4085
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AUD 0.0833
Multiples of: 5

                   
R6002ENHTB1


MOSFET MOSFET
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ROHM 4081
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AUD 0.859
Multiples of: 1

2 A600 V3.4 OhmsN - Channel 4 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V6.5 nCEnhancement  
30N02


20V 30A 12mΩ 1V N Channel TO-252 MOSFETs ROHS
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HL 4078
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AUD 0.0725
Multiples of: 5

                   
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