MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS314PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 86958
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AUD 0.0854
Multiples of: 1

            Optimos P3      
IRFR3607TRPBF


MOSFET N Trench 75V 56A (Tc) 4V @ 100uA 9 mΩ @ 46A,10V TO-252-2 (DPAK) RoHS
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Infineon 12442
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AUD 0.6164
Multiples of: 1

80 A75 V7.34 mOhmsN - Channel    140 WSmd/SmtDPAKReelSi1 Channel20 V56 nC   
IRL3705ZSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
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Infineon 3492
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AUD 1.7785
Multiples of: 1

86 A55 V8 mOhmsN - Channel 3 V + 175 C130 WSmd/SmtD2PAKReelSi1 Channel 60 nC   
30P03D


30V 30A 15mΩ 2.5V P Channel PDFN-8(3x3) MOSFETs ROHS
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HL 3482
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AUD 0.0847
Multiples of: 5

                   
KIA3401


MOSFET P Trench 30V 4A 1.3V @ 250uA 60 mΩ @ 4A,10V SOT-23 (SOT-23-3) RoHS
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KIA 3479
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AUD 0.0525
Multiples of: 10

                   
FDMC8097AC


MOSFET 150V Dual N&P Chnl PowerTrench MOSFET
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ON Semiconductor 3420
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AUD 3.1194
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- 2 A , 6.3 A- 150 v , 150 V155 mOhms , 1.03 OhmsN - Channel, P - Channel - 3 v , 3.1 V- 55 C+ 150 C10 w , 14 WSmd/SmtPOWER33 - 8ReelSi2 Channel+/- 20 v , +/- 25 V2.8 nC , 4.4 nC  Powertrench
2N65G-TM3-T


TO-251 MOSFETs ROHS
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Unisonic 3353
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AUD 0.2374
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WSF10N40


TO-252-2 MOSFETs ROHS
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Winsok 2631
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AUD 0.4652
Multiples of: 1

                   
IPT017N10NF2SATMA1


MOSFETs N
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Infineon 2211
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AUD 2.3313
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294 A100 V1.75 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSMD/SMTHSOF - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V130 nCEnhancement  
SIHD180N60E-GE3


MOSFET 650V Vds; 30V Vgs DPAK TO-252
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Vishay 1203
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AUD 2.4897
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19 A600 V195 mOhmsN - Channel 3 V- 55 C+ 150 C156 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V32 nCEnhancement  
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