MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6668TRPBF


International Rectifier MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC
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Infineon 3648
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AUD 1.605
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55 A80 V12 mOhmsN - Channel20 V4 V- 40 C+ 150 C2.8 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V22 nCEnhancement Directfet
IPG20N06S2L-50


Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
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Infineon 3647
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AUD 0.8904
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20 A55 V50 mOhmsN - Channel   + 175 C51 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
IRFH5304TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 4.5mOhms 16nC
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Infineon 3643
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AUD 0.5821
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79 A30 V4.5 mOhmsN - Channel20 V   3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V16 nC   
BSS84


SOT-23 MOSFETs ROHS
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Hottech 3637
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AUD 0.0089
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LND150N3-G-P003


Microchip Technology MOSFET DepletionMode MOSFET
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Microchip 3634
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AUD 0.7946
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30 mA500 V1000 OhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Reel 1 Channel20 V Depletion  
NTTFS5116PLTAG


ON Semiconductor MOSFET PFET U8FL 60V
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ON Semiconductor 3621
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AUD 0.4378
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- 20 A- 60 V72 mOhmsP - Channel - 1 v to - 3 V- 55 C+ 175 C40 WSmd/SmtWDFN - 8ReelSi1 Channel- 4.5 V25 nCEnhancement  
AON7262E


MOSFET N Trench 60V 21A 2.2V @ 250uA 6.2 mΩ @ 20A,10V DFN 3x3 RoHS
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Alpha & Omega 3531
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AUD 0.515
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DMN15H310SK3-13


MOSFET 150V N-Ch Enh FET 310mOhm 10V 8.3A
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Diodes Incorporated 3370
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AUD 0.3218
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         Smd/SmtTO - 252 - 3Cut TapeSi      
SP40N12P8


SOP-8L MOSFETs ROHS
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Siliup 3171
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AUD 0.0574
Multiples of: 10

                   
DMN3009LFV-7


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 1751
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AUD 0.261
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60 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
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