MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJQ4546VP-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 3841
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AUD 0.5976
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61 A40 V6.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C42 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
SP8K2HZGTB


MOSFETs AECQ
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ROHM 3841
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AUD 1.164
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6 A30 V33 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V7.2 nCEnhancementAEC - Q101 
NTPF450N80S3Z


ON Semiconductor SF3 800V 450MOHM T0-220F
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ON Semiconductor 3838
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AUD 2.7238
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SSM3J374R,LF


MOSFET P-CH VDSS:-30V VGSS:-20+10V I
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Toshiba 3836
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AUD 0.2329
Multiples of: 5

4 A30 V71 mOhmsP - Channel - 2 V + 150 C2 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel- 20 v , 10 V5.9 nCEnhancement U - Mosvi
BSC0921NDI


Infineon Technologies MOSFET N-Ch 30V,30V 40A,40A TISON-8
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Infineon 3834
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AUD 1.0278
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40 A30 V3.9 mOhms , 1.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8ReelSi1 Channel20 V8.9 nC , 33 nCEnhancement Optimos
R6515KNXC7G


MOSFETs TO220 650V 15A N-CH MOSFET
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ROHM 3834
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AUD 2.6433
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15 A650 V315 mOhmsN - Channel 5 V- 55 C+ 150 C60 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , 20 V27.5 nCEnhancement  
TSM10ND65CI C0G


MOSFET 650V 10A Sgl N-Chnl Power MOSFET
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Taiwan Semiconductor 3833
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AUD 4.0385
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10 A650 V800 mOhmsN - Channel 2.5 V- 55 C+ 150 C56.8 WThrough HoleI TO - 220 - 3 Si1 Channel30 V39.6 nCEnhancement  
SP30N06P8


SOP-8L MOSFETs ROHS
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Siliup 3831
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AUD 0.0627
Multiples of: 10

                   
CJAB25N04S


40V 25A 7.5mΩ@10V 2.5V N Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Changjing Electronics Technology 3749
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AUD 0.213
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DMP2045UFY4-7


Trans MOSFET P-CH -20V -4.7A 3-Pin DFN SMD T/R
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Diodes Incorporated 809
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AUD 0.1457
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4.7 A20 V45 mOhmsP - Channel 1 V- 55 C+ 150 C1.49 WSmd/SmtX2 - DFN2015 - 3Cut TapeSi1 Channel8 V6.8 nCEnhancement  
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