MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC8321L


N-Channel 40 V 22A (Ta), 49A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount Power33
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ON Semiconductor 4466
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AUD 0.8242
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49 A40 V2.5 mOhmsN - Channel   + 150 C40 WSmd/SmtPOWER - 33ReelSi1 Channel 21 nC , 44 nC   
DMP3028LPSQ-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 3627
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AUD 0.6673
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21 A30 V18 mOhmsP - Channel 1 V- 55 C+ 150 C35 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel10 V22 nCEnhancementAec - Q101 
IRF7425


SOP-8 MOSFETs ROHS
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TECH PUBLIC 3623
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AUD 0.3606
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CJAB25P03


MOSFET P Channel 30V 25A 3V @ 250uA 20mO @ 10A,10V PDFNWB3.3x3.3-8L RoHS
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Changjing Electronics Technology 3622
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AUD 0.2222
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EFC4K110NUZTDG


MOSFET Dual NCH 24V 25A
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ON Semiconductor 3622
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AUD 1.5022
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           Cut Tape       
FDD86110


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 3616
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AUD 2.1015
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12.5 A100 V10.2 mOhmsN - Channel  - 55 C+ 150 C3.1 WThrough HoleTO - 252ReelSi1 Channel20 V25 nCEnhancement Powertrench
SSM6J216FE,LF


MOSFET LowON Res MOSFET ID=--4.8A VDSS=-12V
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Toshiba 3613
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AUD 0.1851
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4.8 A12 V26 mOhmsP - Channel 1 V-+ 150 C700 mWSmd/SmtSOT - 563 - 6Cut TapeSi1 Channel8 V12.7 nCEnhancement  
PMF170XP.115


Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SOT323
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Nexperia 3612
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AUD 0.1311
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IRF510PBF


N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 3597
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AUD 0.5962
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5.6 A100 V540 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V8.3 nCEnhancement  
Hot BSC067N06LS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 3579
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AUD 0.5473
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50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSONReelSi1 Channel20 V67 nCEnhancement Optimos
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