MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3010LK3-13


MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF
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Diodes Incorporated 3654
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AUD 0.3858
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43 A30 V10 mOhmsN - Channel20 V2.5 V- 55 C+ 150 C2.4 WSmd/SmtDPAK - 2ReelSi1 Channel20 V16.1 nCEnhancement Powerdi
2N7002KW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 3637
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AUD 0.0187
Multiples of: 50

                   
MCQ4410-TP


MOSFET N-Channel MOSFET, SOP-8 package
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Micro Commercial Components (MCC) 3634
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AUD 0.2348
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7.5 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtSOP - 8Cut TapeSi1 Channel12 V40 nCEnhancement  
TSM60NC980CH C5G


MOSFETs 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3634
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AUD 0.9249
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4 A600 V980 mOhmsN - Channel 5 V- 55 C+ 150 C57 WThrough HoleTO - 251 - 3TubeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
TSM60NC620CH C5G


MOSFETs 600V, 7A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3634
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AUD 1.2498
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7 A600 V620 mOhmsN - Channel 5 V- 55 C+ 150 C78 WThrough HoleTO - 251 - 3TubeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
SIHP22N60AE-BE3


MOSFET N-CHANNEL 600V
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Vishay 3630
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AUD 3.9231
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20 A600 V156 mOhmsN - Channel 4 V- 55 C+ 150 C179 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V96 nCEnhancement  
RFD14N05SM9A


Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
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ON Semiconductor 3627
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AUD 0.5976
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   N Channel               
QH8KC5TCR


MOSFET 60V N&N-CHANNEL
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ROHM 3626
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AUD 0.4367
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3 A60 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.1 nCEnhancement  
2N7002


null 300mA 225mW 1.4@4.5V,200mA 1.5V@250uA SOT-23 MOSFETs ROHS
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Siliup 3589
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AUD 0.0097
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DMP3007SFG-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 2155
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AUD 0.5369
Multiples of: 1

         Smd/SmtPowerdi3333 - 8Cut TapeSi      
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