MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BML6401


12V 4.3A 50mΩ@4.5V,4.3A 1.3W 950mV@250uA 125pF@10V P Channel 830pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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Bourne 4230
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AUD 0.0505
Multiples of: 10

                   
FH25P03G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong 4229
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AUD 0.096
Multiples of: 5

                   
MIC94051YM4-TR


MOSFET 1.8V-rated reverse-blocking PFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 4222
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AUD 0.7962
Multiples of: 1

- 1.8 A- 6 V160 mOhmsP - Channel 500 mV- 40 C+ 150 C568 mWSmd/SmtSOT - 143 - 4ReelSi 1.8 V Enhancement  
R6004END3TL1


N-Channel 600 V 4A (Tc) 59W (Tc) Surface Mount TO-252
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ROHM 4220
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AUD 1.224
Multiples of: 1

4 A600 V980 mOhmsN - Channel 2 V- 55 C+ 150 C59 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V15 nCEnhancement  
BSS123


100V 0.29A 350mW 2.7@10V 1V@250uA SOT-23 MOSFETs ROHS
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ElecSuper 4219
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AUD 0.0126
Multiples of: 50

                   
AUIRFR5305


Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
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Infineon 4219
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AUD 2.4758
Multiples of: 1

            Hexfet®      
Hot IRF100B201


mosfet n trench 100v 192a 4v @ 250ua 4.2 m @ 115a,10v to-220 (to-220-3) rohs
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Infineon 4214
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AUD 1.5208
Multiples of: 1

192 A100 V4.2 mOhmsN - Channel 2 V- 55 C+ 175 C441 WThrough HoleTO - 220 - 3TubeSi +/- 20 V170 nCEnhancement  
Hot IRFH7004TRPBF


MOSFET N Trench 40V 100A (Tc) 3.9V @ 150uA 1.4 mΩ @ 100A,10V PQFN 5X6 RoHS
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Infineon 4208
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AUD 0.6148
Multiples of: 1

259 A40 V1.1 mOhmsN - Channel 3 V  156 WSmd/SmtPQFN - 8ReelSi1 Channel 129 nC  Strongirfet
PJA3404_R1_00001


MOSFET N Channel 30V 5.6A 2.1V @ 250uA 45mO @ 3.5A,4.5V SOT-23 RoHS
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Panjit 4200
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AUD 0.0641
Multiples of: 10

                   
DMN3190LDW-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
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Diodes Incorporated 3986
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AUD 0.0902
Multiples of: 5

1 A30 V190 mOhmsN - Channel20 V1.5 V- 55 C+ 150 C320 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel10 V2 nCEnhancement  
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