MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7115DN-T1-E3


MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
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Vishay 4298
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AUD 1.4614
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   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
EFC4C012NLTDG


MOSFET NCH 30V 30A WLCSP6 DUAL N-CHAN
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ON Semiconductor 4297
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AUD 1.8159
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19 A30 V5 mOhms , 5 mOhmsN - Channel 1.3 V + 150 C2.5 WSmd/SmtWLCSP - 6Cut TapeSi2 Channel20 V18 nC , 18 nCEnhancement  
PJQ4431EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 4295
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AUD 0.6548
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78 A30 V7 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V68 nCEnhancementAEC - Q101 
DMP31D0UFB4-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
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Diodes Incorporated 4292
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AUD 0.1311
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760 mA30 V2 OhmsP - Channel 1.1 V- 55 C+ 150 C460 mWSmd/SmtX2 - DFN1006 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
SIRA99DP-T1-RE3


MOSFETs P-CHANNEL 30-V (D-S) MOSFET
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Vishay 4292
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AUD 2.6016
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195 A30 V1.7 mOhmsP - Channel 2.5 V- 55 C+ 150 C104 WSMD/SMTPOWERPAK 1212 - 8 Si1 Channel- 20 V , + 16 V172.5 nCEnhancement TrenchFET
NVMFWS0D45N04XMT1G


MOSFETs 40V T10M IN SO8FL HEFET PACKAGE
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ON Semiconductor 4292
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AUD 3.0032
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469 A40 V450 uOhmsN - Channel 3.5 V- 55 C+ 175 C180 WSMD/SMTDFNW - 5Reel , Cut Tape 1 Channel+ 20 V115 nCEnhancement  
TX50N06


MOSFET N Channel 60V 50A(Tc) 2.5V @ 250uA 20mO @ 20A,10V TO-252 RoHS
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XDS 4290
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AUD 0.2532
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SI2309-HXY


60V 2A 1.5W 160mΩ@10V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 4288
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AUD 0.0498
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AO3404


SOT-23 MOSFETs ROHS
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Bourne 4287
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AUD 0.0411
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LSI1012XT1G


20V 500mA 250mW 410mΩ@4.5V,600mA 900mV@250uA N Channel SC-89 MOSFETs ROHS
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Leshan 4287
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AUD 0.0416
Multiples of: 20

                   
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