MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDP047N08


MOSFET 75V N-Channel PowerTrench
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ON Semiconductor 3691
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AUD 2.4955
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164 A75 V4.7 mOhmsN - Channel  - 55 C+ 175 C268 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
WST2314


MOSFET N Trench 20V 5.5A 1.4V @ 250uA 32 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 3690
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AUD 0.0666
Multiples of: 10

                   
BSP129 H6327


Infineon Technologies MOSFET N-Ch 240V 350mA SOT-223-3
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Infineon 3689
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AUD 0.3349
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50 mA240 V6 OhmsN - Channel - 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V3.8 nCDepletion  
BSC031N06NS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
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Infineon 3686
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AUD 1.519
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   N Channel               
DMN1045UFR4-7


MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss
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Diodes Incorporated 3685
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AUD 0.1313
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3.2 A12 V25 mOhmsN - Channel 400 mV- 55 C+ 150 C1.26 WSmd/SmtX2 - DFN1010 - 3Cut TapeSi1 Channel8 V4.8 nCEnhancement  
ASDM4100S-R


SOP-8 MOSFETs ROHS
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Ascend 3685
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AUD 0.253
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MS10N10


100V 12A 115Ω@10V 347W N Channel TO-252 MOSFETs ROHS
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MSKSEMI 3685
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AUD 0.2985
Multiples of: 5

                   
BSC0901NSIXT


MOSFET OptiMOS Power MOSFET
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Infineon 3684
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AUD 0.951
Multiples of: 1

100 A30 V1.7 mOhmsN - Channel 1 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V41 nCEnhancement Optimos
DMTH10H025SK3-13


MOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
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Diodes Incorporated 3683
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AUD 0.4436
Multiples of: 1

46.3 A100 V23 mOhmsN - Channel 2 V- 55 C+ 175 C3.7 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21.4 nCEnhancement  
SI2302


20V 3A 35mΩ@4.5V,3A 400mW 1.2V@250uA null SOT-23 MOSFETs ROHS
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FUXINSEMI 2182
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AUD 0.0139
Multiples of: 50

                   
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