MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HKTQ50N03


30V 50A N Channel PDFN3333 MOSFETs ROHS
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Hottech 4272
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AUD 0.1036
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FDN358P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4271
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AUD 0.0833
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SP2004KT2


SOT-23 MOSFETs ROHS
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Siliup 4268
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AUD 0.0126
Multiples of: 50

                   
2N7002W


null 300mA 200mW 1.4@4.5V,200mA 1.5V@250uA SOT-323 MOSFETs ROHS
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Siliup 4268
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AUD 0.0135
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AO3400A


30V 5.8A 350mW 35mΩ@10V,5.8A 1.4V@250uA null SOT-23 MOSFETs ROHS
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FUXINSEMI 4268
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AUD 0.0334
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FDS6294


Transistor: N-MOSFET; unipolar; 30V; 13A; 3W; SO8
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ON Semiconductor 4268
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AUD 0.5625
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            powertrench®      
RJK03M5DNS-00#J5


MOSFET BEAM2 Series FET, 30V, HWSON3030-8
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Renesas 4268
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AUD 0.784
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         Smd/SmtHWSON - 8TubeSi      
IAUCN10S7N074ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 4263
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AUD 1.0616
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78 A100 V7.4 mOhmsN - Channel 3.2 V- 55 C+ 175 C96 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21.4 nCEnhancement  
DMT6007LFGQ-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 4156
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AUD 0.674
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80 A60 V6 mOhmsN - Channel 800 mV- 55 C+ 150 C62.5 WSmd/SmtPOWERDI - 3333 - 8Cut TapeSi1 Channel20 V41.3 nCEnhancementAec - Q101 
TK33S10N1Z,LQ


Toshiba MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK
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Toshiba 0
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AUD 1.3343
Multiples of: 1

33 A100 V9.7 mOhmsN - Channel     Smd/SmtDPAK - 3ReelSi1 Channel10 V    
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