MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VNP20N07-E


Driver; low-side switch; 20A; 83W; Channels:1; TO220-3; 70V
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STMicroelectronics 3865
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AUD 3.2276
Multiples of: 1000

             1     
WNM3025-3/TR


MOSFET DFN1006-3L RoHS
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Will Semiconductor 3865
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AUD 0.0818
Multiples of: 5

                   
R6030ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 3859
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AUD 6.5769
Multiples of: 1

30 A600 V130 mOhmsN - Channel 4 V- 55 C+ 155 C86 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V85 nCEnhancement  
PJE8403_R1_00001


MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
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Panjit 3855
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AUD 0.1624
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BSZ017NE2LS5IATMA1


MOSFET TRENCH <= 40V
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Infineon 3855
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AUD 0.811
Multiples of: 1

 25 V N - Channel     Smd/SmtTSDSON - 8Cut TapeSi     Optimos
SWSA1N60DC


600V 1A SOT-223 MOSFETs ROHS
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Sam&wing 3850
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AUD 0.1336
Multiples of: 5

                   
SIRA12DDP-T1-GE3


MOSFETs 30V Vds +20, -16V Vgs PowerPAK SO-8
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Vishay 3829
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AUD 0.2643
Multiples of: 1

81 A30 V3.6 mOhmsN - Channel 2.4 V- 55 C+ 150 C38 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V22 nCEnhancement  
IRFR7446TRPBF


MOSFET N Trench 40V 56A (Tc) 3.9V @ 100uA 3.9 mΩ @ 56A,10V TO-252-2 (DPAK) RoHS
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Infineon 3754
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AUD 0.6339
Multiples of: 1

120 A40 V3 mOhmsN - Channel20 V3 V- 55 C+ 175 C98 WSmd/SmtDPAK - 2ReelSi1 Channel20 V65 nCEnhancement Strongirfet
AO3404


SOT-23 MOSFETs ROHS
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Bourne 3753
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AUD 0.0367
Multiples of: 10

                   
SSM6J511NU,LF(T


Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
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Toshiba 2885
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AUD 0.3072
Multiples of: 1

                   
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