MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP60T15G


MOSFET N Trench 60V 150A (Tc) 4V @ 250uA 3.1 mΩ @ 20A,10V DFN 5x6-8L RoHS
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NCE Power 4287
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AUD 0.7022
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IQDH45N04LM6SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4287
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AUD 3.2651
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611 A40 V490 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement OptiMOS
DI105N04PQ-AQ


MOSFETs MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101
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Diotec 4286
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AUD 0.8206
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105 A40 V2.6 mOhmsN - Channel 1.4 V- 55 C+ 150 C83 WSMD/SMTQFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
IRFH7932TRPBF


N-Channel 30 V 24A (Ta), 104A (Tc) 3.4W (Ta) Surface Mount PQFN (5x6) Single Die
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Infineon 4284
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AUD 0.791
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104 A30 V3.9 mOhmsN - Channel 2.35 V- 55 C+ 150 C3.4 WSmd/SmtPQFN - 8ReelSi1 Channel20 V34 nCEnhancement Strongirfet
SQ9945BEY-T1_BE3


MOSFET DUAL N-CH 60V D-S
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Vishay 4280
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AUD 0.7466
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5.4 A60 V45 mOhmsN - Channel - 20 V , + 20 V12 n C- 55 C+ 175 CSMD/SMTSO - 8Trenchfet , Cut Tape , Reel , ReelSi2 Channel45 mOhms1.5 V4 WEnhancement 
SI7415DN-T1-GE3


MOSFET 60V 5.7A 3.8W 65mohm @ 10V
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Vishay 4276
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AUD 0.8038
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
DMN3018SSS-13


Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
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Diodes Incorporated 4274
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AUD 0.1711
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9.7 A30 V35 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.7 WSmd/SmtSOIC - 8ReelSi1 Channel25 V6 nCEnhancement  
BSZ100N03LS G


MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Infineon 4274
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AUD 0.4582
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12 A30 V10 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V Enhancement Optimos
DMS2085LSD-13


Diodes Incorporated MOSFET P-Ch Enh Fet wInt Schottky -20Vbr 20Vr
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Diodes Incorporated 4273
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AUD 0.1519
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3.3 A20 V85 mOhmsP - Channel - 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V7.8 nCEnhancement  
DMP2123LQ-7


MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W
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Diodes Incorporated 3807
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AUD 0.1217
Multiples of: 5

- 3 A- 20 V123 mOhmsP - Channel - 1.25 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 323 - 3ReelSi1 Channel+/- 12 V7.3 nCEnhancementAec - Q101 
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