MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX3008NBK


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5616
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AUD 0.0357
Multiples of: 10

                   
FH4407A2


30V SO-8 MOSFETs ROHS
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Xinfeihong 3715
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AUD 0.0806
Multiples of: 5

                   
RQ1E070RPTR


ROHM Semiconductor MOSFET MID PWR MOSFET SER
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ROHM 3706
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AUD 0.7421
Multiples of: 1

7 A30 V12 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi1 Channel20 V50 nCEnhancement  
JMTP160P03D


SOP-8 MOSFETs ROHS
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JieJie 3705
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AUD 0.2158
Multiples of: 5

                   
QH8KB5TCR


MOSFET 40V N&N-CHANNEL
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ROHM 3702
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AUD 0.4175
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4.5 A40 V44 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.5 nCEnhancement  
10N06


60V 10A 40mΩ 2.5V N Channel SOP-8 MOSFETs ROHS
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HL 3695
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AUD 0.0615
Multiples of: 10

                   
BSC010NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 3690
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AUD 0.8439
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100 A25 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel10 V64 nCEnhancement Optimos
IQD005N04NM6SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 2903
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AUD 2.8075
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597 A40 V490 uOhmsN - Channel 2.8 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V130 nCEnhancement OptiMOS
IPD020N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 1255
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AUD 0.7634
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143 A30 V2.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C136 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V33 nCEnhancement StrongIRFET
BSS138P,215


N-Channel 60 V 360mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB
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Nexperia 0
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AUD 0.0343
Multiples of: 3000

360 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23ReelSi1 Channel10 V0.72 nCEnhancement  
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