MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP100NF04


Transistor: N-MOSFET; unipolar; 40V; 120A; 300W; TO220-3
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STMicroelectronics 33659
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AUD 2.0926
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BUK7611-55A,118


Trans MOSFET N-CH 55V 75A Automotive 3-Pin(2+Tab) D2PAK T/R
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Nexperia 4591
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AUD 1.8797
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75 A55 V11 mOhmsn - channel  - 55 C+ 175 C166 Wsmd/smtTO - 263 - 3Tape And Reelsi1 channel20 V enhancement  
FQP6N70


Trans MOSFET N-CH 700V 6.2A 3-Pin(3+Tab) TO-220AB Rail
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 3880
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AUD 1.9521
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           Rail/Tube    enhancement  
IRFH4210DTRPBF


International Rectifier MOSFET 25V Single N-Ch HEXFET PWR 50A
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Infineon 3880
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AUD 2.0388
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44 A25 V1.1 mOhmsn - channel20 V1.6 V- 55 C+ 150 C3.5 Wsmd/smtPQFN - 8Reelsi1 channel20 V77 nC   
STP18N55M5


Transistor: N-MOSFET; unipolar; 550V; 10A; 110W; TO220-3
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STMicroelectronics 3880
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AUD 3.3283
Multiples of: 1000

            Supermesh      
IRFP4868PBF


International Rectifier MOSFET 300V, 70A, 32 mOhm 180 nC Qg, TO-247AC
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Infineon 3880
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AUD 3.288
Multiples of: 1

70 A300 V32 mOhmsN - Channel 5 V- 55 C+ 175 C517 WThrough HoleTO - 247 - 3TubeSi  270 nCEnhancement  
IPB180N06S4H1ATMA2


MOSFET N-Ch 60V 180A D2PAK-6
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Infineon 3880
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AUD 3.0444
Multiples of: 1000

180 A60 V1.7 mOhmsN - Channel     Smd/SmtTO - 263 - 7ReelSi1 Channel   Aec - Q101 
VP2450N8-G


Transistor: P-MOSFET; unipolar; -500V; -0.2A; 1.6W; SOT89-3
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Microchip 3880
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AUD 3.6138
Multiples of: 2000

160 mA500 V30 OhmsP - Channel 1.5 V- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel- 10 V Enhancement  
STB120NF10T4


Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
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STMicroelectronics 1940
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AUD 2.2761
Multiples of: 1000

            Supermesh      
STH180N10F3-2


MOSFET N-Ch 100V 3.9 mOhm 180A STripFET
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STMicroelectronics 0
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AUD 2.8429
Multiples of: 1000

120 A100 V4.5 mOhmsn - channel 4 V  315 Wthrough holeTO - 220Reelsi1 channel20 V114.6 nC  stripfet
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