MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot RQ3E130MNTB1


MOSFET N Trench 30V 13A 2.5V @ 1mA 8.1 mΩ @ 13A,10V HSMT8 RoHS
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ROHM 3756
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AUD 0.4008
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         Smd/SmtH SMT - 8ReelSi      
BSZ086P03NS3G


MOSFET P Channel 30V 13.5A 3.1V @ 105uA 8.6mO @ 20A,10V TSDSON-8 RoHS
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Infineon 3736
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AUD 0.5001
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IRFR120TRRPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 3736
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AUD 0.9729
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
IPB144N12N3GATMA1


Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO263-3
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Infineon 3736
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AUD 1.6254
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            Optimos 3      
SUD15N15-95-BE3


MOSFET 150V N-CH (D-S) 175 DEG.C
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Vishay 3735
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AUD 2.75
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15 A150 V95 mOhmsN - Channel 2 V- 55 C+ 175 C62 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancement  
DMN33D8LDW-7


Diodes Incorporated MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
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Diodes Incorporated 3733
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AUD 0.0821
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250 mA30 V2.4 Ohms , 2.4 OhmsN - Channel 800 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V1.23 nC , 1.23 nCEnhancement  
IRLML6401


SOT-23 MOSFETs ROHS
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Bourne 3336
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AUD 0.0492
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FDN337N


SOT-23 MOSFETs ROHS
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FUXINSEMI 1794
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AUD 0.0457
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NTD6415ANLT4G


ON Semiconductor MOSFET 100V HD3E NCH
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ON Semiconductor 1670
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AUD 1.5252
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23 A100 V44 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSmd/SmtDPAK - 3ReelSi1 Channel20 V35 nC   
NX3008PBKV,115


NXP Semiconductors MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET
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Nexperia 402
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AUD 0.4419
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- 220 mA- 30 V2.8 OhmsP - Channel - 0.9 V- 55 C+ 150 C1.09 WSmd/SmtSOT - 666 - 6ReelSi2 Channel 0.55 nCEnhancement  
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