MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
1N60G-AA3-R


MOSFET N Trench 600V 1A 4V @ 250uA 11.5 Ω 600 mA,10V SOT-223 RoHS
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Unisonic 4457
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AUD 0.0864
Multiples of: 5

                   
IPP60R190C6


MOSFET 600V CoolMOS C6 Power Transistor
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Infineon 4456
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AUD 2.1127
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20.2 A600 V170 mOhmsN - Channel 2.5 V- 55 C+ 150 C151 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V63 nCEnhancement Coolmos
OSD50N06T


60V 50A 13.5m 60W TO-252 MOSFETs ROHS
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OSEN 4452
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AUD 0.1041
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BSC011N03LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4452
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AUD 1.6133
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100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V72 nCEnhancement  
RD3S100AAFRATL


N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252
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ROHM 4452
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AUD 2.3048
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10 A190 V182 mOhmsN - Channel 2.5 V- 55 C+ 150 C85 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V52 nCEnhancementAEC - Q101 
IQD016N08NM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4450
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AUD 4.0508
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323 A80 V1.57 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V106 nCEnhancement OptiMOS
DMN2022UFDF-7


MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
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Diodes Incorporated 4448
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AUD 0.1973
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7.9 A20 V35 mOhmsN - Channel 1 V- 55 C+ 150 C2.03 WSmd/SmtU - DFN2020 - F - 6Cut TapeSi1 Channel8 V18 nCEnhancement  
3400A


30V 6A 23mΩ 1.4V N Channel SOT23 MOSFETs ROHS
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HL 4442
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AUD 0.0285
Multiples of: 20

                   
DMHC3025LSD-13


MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS
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Diodes Incorporated 4418
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AUD 0.2691
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6 A , 4.2 A30 V25 mOhms , 50 mOhmsN And P - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi4 Channel10 v , - 10 V11.7 nC , 11.4 nCEnhancement  
ISC104N12LM6ATMA1


MOSFETs N
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Infineon 0
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AUD 1.3357
Multiples of: 1

63 A120 V10.4 mOhmsN - Channel 2.2 V- 55 C+ 175 C94 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.4 nCEnhancement OptiMOS
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