MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDV303N


SOT-23 MOSFETs ROHS
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MSKSEMI 4597
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AUD 0.0349
Multiples of: 20

                   
SI7461DP-T1-E3


P-Channel 60 V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 4584
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AUD 1.6613
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
TSM180P03CS RLG


MOSFET -30V, -10A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 4583
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AUD 1.0923
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10 A30 V14 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel- 10 V14.6 nCEnhancement  
Hot TK6A80E,S4X


Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
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Toshiba 4582
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AUD 0.5795
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6 A800 V1.35 OhmsN - Channel 4 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V32 nCEnhancement  
FQB10N50CFTM_WS


Fairchild Semiconductor MOSFET 500V 10A N-Channel
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ON Semiconductor 4579
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AUD 2.8654
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10 A500 V610 mOhmsN - Channel30 V - 55 C+ 150 C143 WSmd/SmtDPAK - 3ReelSi1 Channel30 V45 nCEnhancement  
SI4459ADY-T1-GE3


MOSFET -30V Vds 20V Vgs SO-8
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Vishay 4578
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AUD 0.7633
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29 A30 V5 mOhmsP - Channel 1 V- 55 C+ 150 C7.8 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V129 nCEnhancement Trenchfet
AGM40P65AP


40V 12A 65m@10V,6A 18W 1.65V@250uA 1PCSPChannel DFN3x3 MOSFETs ROHS
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AGM-Semi 4578
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AUD 0.0979
Multiples of: 5

                   
NVMFS5C682NLAFT1G


MOSFET T6 60V NCH LL IN SO8FL
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ON Semiconductor 4578
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AUD 0.5681
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           Cut Tape       
IRF610PBF


N-Channel 200 V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
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Vishay 4562
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AUD 0.4416
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3.3 A200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C36 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V8.2 nCEnhancement  
ZVN4206GVTA


N-Channel 60 V 1A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 4491
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AUD 0.6058
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1 A60 V1 OhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel10 V Enhancement  
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