MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3105LVT-7


MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K
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Diodes Incorporated 4559
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AUD 0.1691
Multiples of: 1

3.9 A30 V75 mOhmsP - Channel  - 55 C+ 150 C1.15 WSmd/SmtTSOT26 - 6ReelSi1 Channel12 V19.8 nCEnhancement  
BRCS120P03ZC


PDFN-8(5x6) MOSFETs ROHS
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Blue Rocket 4559
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AUD 0.1648
Multiples of: 5

                   
NTD3055-150T4G


ON Semiconductor MOSFET 60V 9A N-Channel
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ON Semiconductor 4559
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AUD 0.2845
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9 A60 V122 mOhmsN - Channel20 V - 55 C+ 175 C28.8 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
LND150N3-G


Transistor: N-MOSFET; unipolar; 500V; 0.03A; 740mW; TO92
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Microchip 4559
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AUD 0.8289
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30 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92BulkSi1 Channel20 V Depletion  
FCB260N65S3


MOSFET SUPERFET3 650V D2PAK PKG
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ON Semiconductor 4557
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AUD 2.9881
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12 A650 V260 mOhmsN - Channel 2.5 V- 55 C+ 150 C90 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V24 nCEnhancement  
BSC0500NSIATMA1


MOSFET LV POWER MOS
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Infineon 4556
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AUD 0.9079
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100 A30 V1.3 mOhmsN - Channel 2 V- 55 C+ 150 C69 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V52 nCEnhancement OptiMOS
SWHA60N04V


40V 60A 2.3mΩ DFN(5x6) MOSFETs ROHS
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Sam&wing 4550
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AUD 0.3675
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HKTQ50N03


30V 50A N Channel PDFN3333 MOSFETs ROHS
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Hottech 4544
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AUD 0.1288
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SIHLL110TR-GE3


MOSFET 100V Vds 20V Vgs SOT-223
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Vishay 3932
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AUD 0.5878
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1.5 A100 V540 mOhmsN - Channel 1 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223 - 3 Si1 Channel10 V6.1 nCEnhancement  
PJQ4524P-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 0
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AUD 0.4479
Multiples of: 1

80 A30 V4.4 mOhmsN - Channel 2.5 V- 55 C+ 175 C45.5 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21 nCEnhancementAEC - Q101 
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