MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ017NE2LS5IATMA1


MOSFET TRENCH <= 40V
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Infineon 4850
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AUD 1.1075
Multiples of: 1

 25 V N - Channel     Smd/SmtTSDSON - 8Cut TapeSi     Optimos
BSZ018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 1.131
Multiples of: 5000

            Optimos      
MCU2D5N04YHQ-TP


MOSFETs N-CHANNEL MOSFET,DPAK
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Micro Commercial Components (MCC) 4850
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AUD 1.1332
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130 A40 V2.5 mOhmsN - Channel 4 V- 55 C+ 175 C125 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi - 20 V , + 20 V57 nCEnhancement  
R6009RND3TL1


MOSFETs TO252 650V 27A N-CH MOSFET
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ROHM 4850
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AUD 1.1518
Multiples of: 2500

9 A600 V665 mOhmsN - Channel 7 V- 55 C+ 150 C125 WSMD/SMTDPAK - 3 (TO - 252 - 3)ReelSi1 Channel- 30 V , + 30 V22 nCEnhancement  
SI4490DY-T1-E3


MOSFET RECOMMENDED ALT 781-SI4490DY-TR
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Vishay 4850
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AUD 1.1665
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel      Trenchfet
R6007RND3TL1


MOSFETs POWER MOSFET SUITABLE F/SWITCH
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ROHM 4850
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AUD 1.2
Multiples of: 2500

7 A600 V940 mOhmsN - Channel 7 V- 55 C+ 150 C96 WSMD/SMTDPAK - 3 (TO - 252 - 3)ReelSi1 Channel- 30 V , + 30 V17.5 nCEnhancement  
R6007KND3TL1


MOSFETs MOSFET 600V NCH 7A TO-252
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ROHM 4850
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AUD 1.2314
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7 A600 V620 mOhmsN - Channel 5 V- 55 C+ 150 C78 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.5 nCEnhancement  
P70LF4QNK-5071


Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
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Shindengen 4850
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AUD 1.26
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            EETMOS4      
BSC014N04LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4850
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AUD 1.2665
Multiples of: 5000

100 A40 V1.4 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V61 nCEnhancement  
TPH1400CQ5,LQ


MOSFETs 150V UMOS10-H SOP Advance(N) 14.1mohm
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Toshiba 4850
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AUD 1.2827
Multiples of: 1

77 A150 V14.1 mOhmsN - Channel 4.5 V + 175 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
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