MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ESN4832


30V 35A 11m@10V,8.0A 20W 1.5V@250uA 2 N-Channel PDFN-8L(3x3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 4631
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AUD 0.1682
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RU3030M2-TP


30V 16A 13m@4.5V,8A 10W 2.5V@250uA DFN-8(3x3) MOSFETs ROHS
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TECH PUBLIC 4631
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AUD 0.1729
Multiples of: 5

                   
Hot US5U1TR


ROHM Semiconductor MOSFET N-CH 30V 1.5A
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ROHM 4626
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AUD 0.3382
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1.5 A30 V240 mOhmsN - Channel    700 mWSmd/SmtTUMT - 5ReelSi1 Channel12 V Enhancement  
PMV20ENR


N-Channel 30 V 6A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
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Nexperia 4623
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AUD 0.211
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7.6 A30 V21 mOhmsN - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel10 V7.2 nCEnhancement  
ISC16DP15LMATMA1


MOSFETs N
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Infineon 4622
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AUD 2.0492
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22 A150 V160 mOhmsP - Channel 2 V- 55 C+ 175 C188 WSMD/SMTTDSON - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V46 nCEnhancement  
RRL035P03FRATR


MOSFET Pch -30V Vds -3.5A 0.058Rds(on) 8Qg
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ROHM 4619
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AUD 0.2454
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3.5 A30 V36 mOhmsP - Channel 1 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi1 Channel- 10 V14 nCEnhancementAec - Q101 
BSC040N10NS5


MOSFET N-Ch 100V 100A TDSON-8
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Infineon 4507
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AUD 0.887
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WSD6035DN


60V 40A 20mΩ@10V,15A 34.7W 2.5V@250uA 2 N-Channel DFN-8(3x3) MOSFETs ROHS
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Winsok 3802
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AUD 0.4211
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FDMC4435BZ_F126


Fairchild Semiconductor MOSFET -30V P-CH PwrTrench
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ON Semiconductor 3662
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AUD 0.5226
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- 8.5 A- 30 V20 mOhmsp - channel  - 55 C+ 150 C31 Wsmd/smtMLP - 8Reelsi1 channel     
HY3010D


TO-252-2L MOSFETs ROHS
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HuaYi 1709
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AUD 0.4521
Multiples of: 1

                   
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