MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH7440TRPBF


MOSFET N Trench 40V 85A (Tc) 3.9V @ 100uA 2.4 mΩ @ 50A,10V PG-TDSON-8 RoHS
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Infineon 9700
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AUD 0.4715
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159 A40 V2.7 mOhmsN - Channel 3.9 V- 55 C+ 150 C104 WSmd/SmtPQFN - 8ReelSi1 Channel20 V92 nCEnhancement Strongirfet
JMTK80N06A


60V 80A 5.3mΩ@10V,30A 108W 3V@250uA N Channel TO-252-2 MOSFETs ROHS
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JieJie 6940
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AUD 0.2827
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AUIRF7640S2TR


Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
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Infineon 4646
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AUD 1.0015
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            hexfet®      
ISC058N04NM5ATMA1


MOSFET TRENCH <= 40V
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Infineon 4643
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AUD 0.4499
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63 A40 V5.8 mOhmsN - Channel 2.2 V- 55 C+ 175 C42 WSMD/SMTTDSON - FL - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12 nCEnhancement  
BXT1150N10D


Transistor: N-MOSFET
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Bridgelux 4640
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AUD 0.2027
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R8007AND3FRATL


MOSFET 800V N-CH 7A POWER
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ROHM 4639
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AUD 3.8254
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7 A800 V1.6 OhmsN - Channel 5 V-+ 150 C140 WSMD/SMTTO - 252 - 3/2Reel , Cut TapeSi1 Channel- 30 V , + 30 V28 nCEnhancement  
IRF6623TRPBF


International Rectifier MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
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Infineon 4623
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AUD 1.5006
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16 A20 V9.7 mOhmsN - Channel20 V2.2 V- 40 C+ 150 C42 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V11 nC   
IRLS3034TRLPBF


Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
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Infineon 4419
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AUD 1.8552
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343 A40 V1.7 mOhmsN - Channel 2.5 V + 175 C375 WSmd/SmtD2PAKReelSi1 Channel 162 nC   
DMN6040SSD-13


MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
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Diodes Incorporated 3525
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AUD 0.3024
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5 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSO - 8Cut TapeSi2 Channel10 V22.4 nCEnhancement  
DMNH6022SSDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 2151
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AUD 0.7388
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