MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
EFC6612R-TF


ON Semiconductor MOSFET NCHNCH 23A 20V 4.4M OHM
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ON Semiconductor 4850
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AUD 0.6268
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 20 V4.2 mOhms , 4.2 mOhmsn - channel 500 mV- 55 C+ 150 C2.5 Wsmd/smtCSP - 6Reelsi2 channel12 V27 nC , 27 nCenhancement  
BSZ22DN20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 7A; 34W; PG-TSDSON-8
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Infineon 4850
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AUD 0.6383
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            Optimos 3      
BSC010NE2LSIATMA1


MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 4850
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AUD 0.6401
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100 A25 V900 uOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel20 V78 nCEnhancement Optimos
BSC057N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8
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Infineon 4850
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AUD 0.6405
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            Optimos 3      
STD10P6F6


Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
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STMicroelectronics 4850
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AUD 0.6419
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TPH6R008QM,LQ


MOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm
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Toshiba 4850
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AUD 0.6462
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107 A60 V , 80 V6 mOhmsN - Channel 3.5 V + 175 C135 WSMD/SMTSOP - 8ReelSi1 Channel- 20 V , + 20 V38 nCEnhancement  
BSZ035N03LS G


Infineon Technologies MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Infineon 4850
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AUD 0.66
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40 A30 V3.5 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V Enhancement Optimos
YJG60G04HHQ


PDFN5060-8L MOSFETs ROHS
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Yangjie 4850
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AUD 0.6709
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BSC014N06NSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4850
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AUD 0.6944
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100 A60 V1.45 mOhmsN - Channel 2.1 V- 55 C+ 150 C156 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V89 nCEnhancement  
STD9NM60N


MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO
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STMicroelectronics 4850
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AUD 0.6958
Multiples of: 2500

6.5 A600 V745 mOhmsn - channel    70 Wsmd/smtDPAKReelsi1 channel    mdmesh
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