MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RS6G100BGTB1


MOSFETs RS6G100BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 4636
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AUD 1.3413
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100 A40 V3.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C59 WSMD/SMTHSOP8Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement  
RSF015N06FRATL


MOSFET Nch 60V Vds 1.5A 0.255Rds(on) 2Qg
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ROHM 4633
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AUD 0.1527
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1.5 A60 V210 mOhmsN - Channel 1 V + 150 C800 mWSmd/SmtTUMT - 3Cut TapeSi1 Channel10 V2 nCEnhancementAec - Q101 
ISC058N04NM5ATMA1


MOSFET TRENCH <= 40V
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Infineon 4633
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AUD 0.4121
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63 A40 V5.8 mOhmsN - Channel 2.2 V- 55 C+ 175 C42 WSMD/SMTTDSON - FL - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12 nCEnhancement  
DI025N20PQ


MOSFETs MOSFET, PowerQFN 5x6, 0, 200V, 25A, 0.048?
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Diotec 4626
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AUD 1.496
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25 A200 V48 mOhmsN - Channel 4 V- 55 C+ 150 C135 WSMD/SMTPQFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
AUIRLR3114Z


Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
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Infineon 4625
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AUD 1.9664
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   N Channel      DPAK - 3Tube       
HY1904C2


MOSFET N Trench 40V 65A (Tc) 3V @ 250uA 6 mΩ @ 20A,10V PPAK5*6-8L RoHS
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HuaYi 4622
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AUD 0.2339
Multiples of: 5

                   
S80N03F


30V 82A 4.3mΩ 2.5V N Channel PDFN(5x6) MOSFETs ROHS
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HL 4568
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AUD 0.1074
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SI4455DY-T1-E3


Vishay Semiconductors MOSFET 150V 8.9A 5.9W 295mohm 10V
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Vishay 4422
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AUD 1.2576
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2 A- 150 V295 mOhmsp - channel20 V - 50 C+ 150 C3.1 Wsmd/smtSOIC - 8 NarrowReelsi   enhancement trenchfet
SIR576DP-T1-RE3


MOSFETs N-CHANNEL 150-V (D-S)
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Vishay 4240
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AUD 1.0113
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           Reel , Cut TapeSi      
IPB107N20N3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
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Infineon 2696
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AUD 4.0388
Multiples of: 1

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