MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AGM405Q


40V 55A 45W 5.7m@10V,20A 2.2V@250uA 1PCSNChannel DFN(5x6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

AGM-Semi 4673
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AUD 0.2563
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SQD50P06-15L-GE3-VB


60V 50A 20mΩ@10V P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 4673
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AUD 0.9184
Multiples of: 1

                   
TSM230N06CP ROG


MOSFET 60V, 50A, Single N-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 4662
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AUD 0.4458
Multiples of: 1

50 A60 V20 mOhmsN - Channel 1.2 V + 150 C53 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V28 nCEnhancement  
SI4936BDY-T1-E3


MOSFET 30 Volt 6.9 Amp 2.8W
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Vishay 4661
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AUD 0.7749
Multiples of: 1

6.9 A30 V35 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.8 WSmd/SmtSO - 8ReelSi2 Channel10 V9.1 nCEnhancement Trenchfet
AON7516


Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN3x3 EP
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Alpha & Omega 4660
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AUD 0.2449
Multiples of: 5

                   
SSM3K56MFV,L3F


MOSFET Small-signal FET 0.8A 20V 0.84ohm
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Toshiba 4656
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AUD 0.0902
Multiples of: 1

800 mA20 V186 mOhmsN - Channel 400 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtVSEM - 3ReelSi1 Channel8 V1 nCEnhancement  
IRF6727MTRPBF


N-Channel 30 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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Infineon 4656
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AUD 1.2681
Multiples of: 1

            Hexfet®      
SI2333DDS-T1-GE3


P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 4651
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AUD 0.188
Multiples of: 5

6 A12 V23 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 (TO - 236)ReelSi1 Channel8 V35 nCEnhancement P - Channel Gen Iii
RS6G100BGTB1


MOSFETs RS6G100BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
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ROHM 4636
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AUD 1.3233
Multiples of: 1

100 A40 V3.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C59 WSMD/SMTHSOP8Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement  
BSC025N08LS5ATMA1


Infineon TRENCH 40<-<100V
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Infineon 3752
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AUD 2.3444
Multiples of: 1

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