MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH6009LPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 4655
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AUD 0.4301
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         Smd/SmtPowerdi5060 - 8Cut TapeSi      
DMT40M9LPS-13


MOSFET N Trench 40V 304A (Tc) 3V @ 250uA 0.9 mΩ @ 50A,10V PowerDI5060-8 (Type K) RoHS
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Diodes Incorporated 4655
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AUD 2.7858
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US6M2TR


Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6
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ROHM 4654
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AUD 0.3497
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1 A , 1.5 A20 v , 30 V240 mOhms , 390 mOhmsN And P - Channel 700 mV , 500 mV- 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
AON6250


MOSFET N-CH 150V 52A 8DFN
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Alpha & Omega 4650
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AUD 1.2589
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HP8KC6TB1


MOSFETs 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4636
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AUD 1.1739
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23 A60 V27 mOhmsN - Channel 2.5 V- 55 C+ 150 C21 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.6 nCEnhancement  
PXN5R4-30QLJ


MOSFET MOSFET DISCRETES
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Nexperia 4554
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AUD 0.3661
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14 A30 V5.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.8 WSMD/SMTMLPAK33 - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V24.2 nCEnhancement  
PSMN034-100BS,118


NXP Semiconductors MOSFET N-CH 100 V 34.5 MOHM MOSFET
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Nexperia 3824
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AUD 0.8849
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32 A90 V62 mOhmsN - Channel4.4 V   86 WSmd/SmtD2PAK - 3ReelSi1 Channel4.4 V    
PSMN7R6-60BS,118


MOSFET N-CH 60 V 7.8 MOHM MOSFET
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Nexperia 3649
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AUD 1.1066
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92 A54 V7.8 mOhmsN - Channel    149 WThrough HoleD2PAKReelSi1 Channel5.6 V    
IRL6283MTRPBF


MOSFET MOSFET N-CH 20V 211A DIRECTFET
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Infineon 3451
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AUD 1.6918
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211 A20 V500 uOhmsN - Channel12 V0.8 V- 40 C+ 150 C63 WSmd/SmtDirectfet - 8 MDReelSi1 Channel12 V105 nC  Directfet
DMN2991UDR4-7


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1010-6 T&R 5K
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Diodes Incorporated 0
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AUD 0.0509
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           Reel , Cut TapeSi      
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