MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM240NH10CR RLG


MOSFETs 100V, 34A, Single N-Channel Automotive MOSFETs
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Taiwan Semiconductor 4850
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AUD 0.7787
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34 A100 V24 mOhmsN - Channel 3.6 V- 55 C+ 175 C63 WSMD/SMTPDFN56UReel , Cut TapeSi1 Channel+ 20 V6 nCEnhancementAEC - Q101PerFET
TSM250NB06DCR RLG


MOSFET Dual N-Chan Pwr MOSFET 60V 30A 25mu
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Taiwan Semiconductor 4850
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AUD 0.7787
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SI4896DY-T1-E3


N-Channel 80 V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
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Vishay 4850
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AUD 0.7806
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   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8ReelSi     Trenchfet
DMT6009LSS-13


MOSFET 60V N-Ch Enh FET 20Vgss 12mOhm 4.5Vgs
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Diodes Incorporated 4850
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AUD 0.7846
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   N - Channel     Smd/SmtSO - 8ReelSi1 Channel     
BSZ018NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 0.8026
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            Optimos      
TQM070NH04CR RLG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 0.8049
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54 A40 V7 mOhmsN - Channel 3.6 V- 55 C+ 175 C55.6 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancementAEC - Q101PerFET
IPLK60R600PFD7ATMA1


MOSFET LOW POWER_NEW
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Infineon 4850
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AUD 0.8061
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           Cut Tape       
YJG80G06B


PDFN-8(5x5.8) MOSFETs ROHS
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Yangjie 4850
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AUD 0.8109
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IPL60R650P6SATMA1


Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
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Infineon 4850
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AUD 0.8171
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            Coolmos P6      
BSC067N06LS3GATMA1


Infineon Technologies MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
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Infineon 4850
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AUD 0.825
Multiples of: 5000

50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V67 nCEnhancement Optimos
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