MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP22D3UFZ-7B


MOSFETs MOSFET BVDSS: 8V 24V X2-DFN0606-3 T&R 10K
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Diodes Incorporated 4583
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AUD 0.0471
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           Reel , Cut Tape       
BSZ900N20NS3G


MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
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Infineon 4583
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AUD 0.88
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15.2 A200 V90 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V8.7 nCEnhancement Optimos
TSM180P03CS RLG


MOSFET -30V, -10A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 4583
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AUD 1.0923
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10 A30 V14 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel- 10 V14.6 nCEnhancement  
IPD075N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
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Infineon 4582
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AUD 0.4334
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            Optimos 3      
IPL60R125P7AUMA1


Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
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Infineon 4582
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AUD 2.0451
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            Coolmos P7      
HP8KE7TB1


MOSFETs 100V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE7 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4582
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AUD 2.2
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24 A100 V27.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C26 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V19.8 nCEnhancement  
BSZ086P03NS3G


MOSFET P Channel 30V 13.5A 3.1V @ 105uA 8.6mO @ 20A,10V TSDSON-8 RoHS
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Infineon 4571
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AUD 1.2567
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ESN7403


30V 31A 13m@10V,8A 30W 1.5V@250uA 1PCSPChannel PDFN-8L(3x3) MOSFETs ROHS
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ElecSuper 4505
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AUD 0.156
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SP010N04BGTH


100V 120A 5m 1 N-Channel TO-252 MOSFETs ROHS
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Siliup 3622
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AUD 0.3337
Multiples of: 5

                   
RQ6E035TNTR


N-Channel 30 V 3.5A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
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ROHM 1430
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AUD 0.3169
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3.5 A30 V54 mOhmsN - Channel 500 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel12 V4.6 nCEnhancement  
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