MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0060TRPBF


SOT23 MOSFETs ROHS
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TECH PUBLIC 4571
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AUD 0.055
Multiples of: 10

                   
DI100N04PQ-AQ


MOSFETs MOSFET, PowerQFN 5x6, 40V, 100A, 150C, N, AEC-Q101
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Diotec 4564
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AUD 0.8554
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100 A40 V2.1 mOhmsN - Channel 2.4 V- 55 C+ 150 C83 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V64 nCEnhancementAEC - Q101 
APG038N01G


100V 104A 3.1mΩ@20V,104A null PDFN5x6 MOSFETs ROHS
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Quan Li 4563
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AUD 1.7513
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BSZ180P03NS3E G


Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon 4556
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AUD 0.2972
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39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V30 nCEnhancement Optimos
AO3407A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4549
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AUD 0.0544
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SED4060GM


MOSFET N Trench 40V 60A 2.2V @ 250uA 9.5 mΩ @ 20A,10V DFN 3x3 RoHS
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SINO-IC 3365
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AUD 0.2839
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DMP26M7UFG-7


MOSFET 20V P-Ch Enh FET 12Vgss PPAP
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Diodes Incorporated 3247
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AUD 0.5172
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- 40 A- 20 V9 mOhmsP - Channel - 400 mV- 55 C+ 150 C41 WSmd/SmtPOWERDI - 3333Reel-1 Channel+/- 10 V156 nCEnhancement Powerdi
BSZ086P03NS3EGATMA1


Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 2252
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AUD 0.4728
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40 A30 V6.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V57.5 nCEnhancement  
DMN62D0UDW-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 2165
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AUD 0.0821
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   N - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi1 Channel     
IPTC017N12NM6ATMA1


MOSFETs N
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Infineon 996
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AUD 5.7791
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331 A120 V1.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C395 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V113 nCEnhancement OptiMOS
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