MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM019NH04CR-V RLG


MOSFETs 40V, 100A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 5.76
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100 A40 V1.9 mOhmsN - Channel 3 V- 55 C+ 175 C150 WSMD/SMTPDFN - 56Reel , Cut TapeSi1 Channel- 20 V , + 20 V89 nCEnhancementAEC - Q101PerFET
BSC105N10LSF G


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
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Infineon 4850
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AUD 8.0226
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90 A100 V10.5 mOhmsn - channel  - 55 C+ 150 C156 Wsmd/smtTDSON - 8Reelsi1 channel20 V enhancement optimos
WSD2090DN56


20V 80A 2.8Ω@4.5V,30A 81W N Channel DFN-8(4.9x5.8) MOSFETs ROHS
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Winsok 4849
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AUD 0.3486
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TSM120NA03CR RLG


MOSFET Power MOSFET N-CHL 30V 39A 11.7mOhm
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Taiwan Semiconductor 4849
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AUD 0.3596
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39 A30 V11.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C33 WSmd/SmtPDFN - 56 - 8Cut TapeSi1 Channel20 V9.2 nCEnhancement  
BSZ065N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
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Infineon 4849
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AUD 0.3963
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            Optimos      
YJG60G10BQ


PDFN-8L(5.9x5.2) MOSFETs ROHS
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Yangjie 4849
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AUD 0.921
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BSC076N04NDATMA1


MOSFET TRENCH <= 40V
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Infineon 4849
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AUD 1.3088
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           Cut Tape       
IPG20N06S2L50AATMA1


MOSFET N-Ch 55V 20A TDSON-8
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Infineon 4848
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AUD 0.7899
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           Cut Tape       
BSZ0501NSIATMA1


MOSFET TRENCH <= 40V
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Infineon 4848
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AUD 0.8486
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         Smd/SmtTSDSON - 8Cut TapeSi     Optimos
IQE022N06LM5CGATMA1


MOSFETs N
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Infineon 4848
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AUD 1.8646
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151 A60 V2.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C100 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V53 nCEnhancement  
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