MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM019NH04CR RLG


MOSFETs 40V, 100A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 2.3262
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214 A40 V2.3 mOhmsN - Channel 3.6 V- 55 C+ 175 C150 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V64 nCEnhancementAEC - Q101PerFET
R6007ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 4850
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AUD 2.3846
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7 A600 V620 mOhmsN - Channel 4 V- 55 C+ 155 C46 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V20 nCEnhancement  
MCACL280N04YHE3-TP


MOSFETs N-CHANNEL MOSFET,DFN5060-C
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Micro Commercial Components (MCC) 4850
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AUD 2.4095
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280 A40 V800 uOhmsN - Channel 4 V- 55 C+ 175 C197 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V79 nCEnhancement  
MSJP11N80A-BP


MOSFETs
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Micro Commercial Components (MCC) 4850
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AUD 3.0254
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           BulkSi      
IQDH35N03LM5CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4850
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AUD 3.22
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700 A30 V350 uOhmsN - Channel 2.8 V- 55 C+ 150 C278 WSMD/SMTPG - WHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V91 nCEnhancement OptiMOS
IQDH35N03LM5SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4850
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AUD 3.22
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700 A30 V350 uOhmsN - Channel 2.8 V- 55 C+ 150 C278 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V91 nCEnhancement OptiMOS
MCACL330N04YHE3-TP


MOSFETs N-CHANNEL MOSFET,DFN5060-C
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Micro Commercial Components (MCC) 4850
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AUD 3.3524
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330 A40 V1 mOhmsN - Channel 4 V- 55 C+ 175 C187.5 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V133 nCEnhancement  
IQD005N04NM6ATMA1


MOSFETs N
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Infineon 4850
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AUD 3.3969
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610 A40 V470 uOhmsN - Channel 2.8 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V130 nCEnhancement  
IPT026N12NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 4850
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AUD 5.7323
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           Reel , Cut Tape       
STH315N10F7-2


MOSFET Automotive N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package
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STMicroelectronics 970
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AUD 4.446
Multiples of: 1000

180 A100 V2.3 mOhmsN - Channel20 V3.5 V- 55 C+ 175 C315 WSmd/SmtH2PAK - 2Cut TapeSi1 Channel20 V180 nC Aec - Q101Stripfet
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