MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJQ4435EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panjit 4845
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AUD 0.4726
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45 A30 V12.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C41 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
PJQ4546VP-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 4845
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AUD 0.6222
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61 A40 V6.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C42 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
TQM070NH04LCR RLG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4845
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AUD 0.7714
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54 A40 V7 mOhmsN - Channel 2.2 V- 55 C+ 175 C46.8 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V11 nCEnhancement PerFET
IPB65R310CFD


MOSFET CoolMOS 650V 310mOhm CFD2 N-Chan MOSFET
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Infineon 4845
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AUD 2.0169
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11.4 A650 V280 mOhmsn - channel 3.5 V- 55 C+ 150 C104.2 Wsmd/smtD2PAKReelsi1 channel20 V41 nCenhancement coolmos
IQDH29NE2LM5CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4845
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AUD 3.0962
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789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMTPG - WHTFN - 9Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement OptiMOS
STS13N3LLH5


MOSFET N-Ch 30V 0.006 Ohm 13A STripFET V
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STMicroelectronics 4844
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AUD 1.1479
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13 A30 V6.6 mOhmsN - Channel  - 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi      
IRFBC30APBF-BE3


MOSFET 600V N-CH HEXFET
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Vishay 4844
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AUD 1.7124
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3.6 A600 V2.2 OhmsN - Channel 4.5 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V23 nCEnhancement  
DI114N06PQ


MOSFETs
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Diotec 4844
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AUD 2.1344
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R6024ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 4844
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AUD 5.0192
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24 A600 V165 mOhmsN - Channel 4 V- 55 C+ 155 C74 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V70 nCEnhancement  
NCE30H10G


PDFN-8(5.1x5.8) MOSFETs ROHS
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NCE Power 4843
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AUD 0.3465
Multiples of: 5

                   
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