MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD26N06S2L35ATMA2


Transistor: N-MOSFET; unipolar; 55V; 22A; 68W; PG-TO252-3
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Infineon 4491
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AUD 0.5664
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            Optimos      
SI1467DH-T1-BE3


P-Channel 20V 3A (Ta), 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
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Vishay 4486
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AUD 0.3906
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2.7 A20 V150 mOhmsP - Channel 1 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V13.5 nCEnhancement  
IQD063N15NM5ATMA1


MOSFETs N
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Infineon 4485
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AUD 4.909
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148 A150 V6.32 mOhmsN - Channel 4.6 V- 55 C+ 150 C278 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement  
DMTH4008LPS-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 4481
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AUD 0.4564
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64.8 A40 V8.8 mOhmsN - Channel 1 V- 55 C+ 175 C55.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V15.3 nCEnhancement  
NP100N03D6


PDFN5x6-8L-A MOSFETs ROHS
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NATLINEAR 4462
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AUD 0.165
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S125N06F


PDFN-8(5x6) MOSFETs ROHS
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HL 4438
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AUD 0.426
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NCE30P12S


MOSFET P Trench 30V 12A 3V @ 250uA 15 mΩ @ 10A,10V SOIC-8_150mil RoHS
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NCE Power 4345
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AUD 0.1813
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RQ6C050UNTR


ROHM Semiconductor MOSFET
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ROHM 4216
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AUD 0.2479
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5 A20 V22 mOhmsN - Channel 300 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6ReelSi1 Channel10 V12 nCEnhancement  
WNM2016A-3/TR


SOT-23-3 MOSFETs ROHS
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Will Semiconductor 3947
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AUD 0.0661
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IRF9610PBF


P-Channel 200 V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB
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Vishay 3468
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AUD 0.6635
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1.8 A200 V3 OhmsP - Channel 2 V- 55 C+ 150 C20 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V11 nCEnhancement  
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