MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP1605


20V 700mA P Channel DFN-3(1x0.6) MOSFETs ROHS
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Quan Li 4490
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AUD 0.039
Multiples of: 20

                   
IRFS4620TRLPBF


MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Infineon 4490
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AUD 1.1082
Multiples of: 1

24 A200 V77.5 mOhmsN - Channel  - 55 C+ 175 C144 WSmd/SmtD2PAKReelSi1 Channel20 V25 nCEnhancement  
IQDH29NE2LM5ATMA1


MOSFETs N
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Infineon 4490
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AUD 3.0092
Multiples of: 1

789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement  
TPH4R008NH,L1Q(M


80V 60A 78W 4m@10V,30A 4V@1mA 1 N-Channel SOP-8-5.0mm MOSFETs ROHS
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Toshiba 4487
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AUD 0.9962
Multiples of: 1

                   
SI1467DH-T1-BE3


P-Channel 20V 3A (Ta), 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
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Vishay 4486
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AUD 0.3906
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2.7 A20 V150 mOhmsP - Channel 1 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , + 8 V13.5 nCEnhancement  
ESN21307


30V 24A 8m@20A,10V 38W 1.5V@250uA 1PCSPChannel PDFN-8L(5x6) MOSFETs ROHS
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ElecSuper 4476
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AUD 0.2376
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BSC097N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
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Infineon 4429
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AUD 0.5484
Multiples of: 1

            Optimos      
PSMN1R8-30MLHX


MOSFET 30V N-CHANNEL LOGIC LEVEL
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Nexperia 4398
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AUD 0.6452
Multiples of: 1

150 A30 V2.1 mOhmsN - Channel 2.2 V- 55 C+ 175 C106 WSMD/SMTLFPAK - 33 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V17 nCEnhancement  
DMN2053U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 3116
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AUD 0.1067
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6.5 A20 V29 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V4.6 nCEnhancement  
DMP2165UW-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 605
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AUD 0.1166
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- 2.5 A20 V90 mOhmsP - Channel 1 V- 55 C+ 150 C0.7 WSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V3.5 nCEnhancement  
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