MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC028N06NSATMA1


MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
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Infineon 33950
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AUD 1.3433
Multiples of: 5000

100 A60 V2.5 mOhmsN - Channel 2.1 V- 55 C+ 150 C83 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V49 nCEnhancement Optimos
1N60G-AA3-R


MOSFET N Trench 600V 1A 4V @ 250uA 11.5 Ω 600 mA,10V SOT-223 RoHS
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Unisonic 17105
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AUD 0.1016
Multiples of: 5

                   
BSC011N03LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4452
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AUD 1.517
Multiples of: 1

100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V72 nCEnhancement  
RD3S100AAFRATL


N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252
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ROHM 4452
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AUD 2.3048
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10 A190 V182 mOhmsN - Channel 2.5 V- 55 C+ 150 C85 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V52 nCEnhancementAEC - Q101 
DMN2022UFDF-7


MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
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Diodes Incorporated 4448
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AUD 0.1855
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7.9 A20 V35 mOhmsN - Channel 1 V- 55 C+ 150 C2.03 WSmd/SmtU - DFN2020 - F - 6Cut TapeSi1 Channel8 V18 nCEnhancement  
IRF7483MTRPBF


International Rectifier MOSFET 40V Single N-Channel HEXFET Power MOSFET
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Infineon 4446
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AUD 1.6918
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135 A40 V2.3 mOhmsN - Channel 2.2 V- 55 C+ 150 C74 WSmd/SmtDirectfet - 4ReelSi1 Channel20 V81 nCEnhancement Strongirfet
IRLML9301TRPBF


MOSFET P Trench 30V 3.6A 2.4V @ 10uA 64 mΩ @ 3.6A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 4345
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AUD 0.0969
Multiples of: 5

   P Channel      SOT - 23Reel       
IQD016N08NM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4101
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AUD 3.809
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323 A80 V1.57 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V106 nCEnhancement OptiMOS
DN1509N8-G


Transistor: N-MOSFET; unipolar; 90V; 0.3A; 1.6W; SOT89-3
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Microchip 3822
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AUD 1.1082
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OSD50N06T


60V 50A 13.5m 60W TO-252 MOSFETs ROHS
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OSEN 504
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AUD 0.1048
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